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Silicon-on-Insulator Technology
5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . ...
Issues in Metal Research: 2011 Edition
Issues in Metal Research / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Metal Research. The editors have built Issues in Metal Research: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Metal Research in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Metal Research / 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
The Book of Stolen Dreams
Originally published: London: Usborne Publishing Ltd, 2021.
Porous Silicon
Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th century. Crystalline (c-) Si, at the heart of integrated circuits, has an indirect band gap of 1.1 eV, which limits its application in optoelectronics. The visible light emitting P-Si may open a new field combining Si integrated technology and optoelectronics. This book is a comprehensive review of the recent research and development of porous silicon. Strong visible photoluminescence (PL) and electroluminescence (EL) from P-Si and other forms of silicon nanocrystallites (nc-Si) are reviewed. Several proposed mechanisms for the PL from porous silicon such as quantum confinement, amorphicity and molecular PL are studied. The following issues are covered: mechanisms for the visible light emission, physical structures, studies of the PL and EL, correlation of structure and optical studies, surface physics and chemistry, relationships among various forms (P-Si, a-Si, µc-Si), device applications, future developments.
Determination of Hydrogen in Materials
Measuring the hydrogen content in materials is important both for research and for various applications in material and surface sciences, such as hydrogen embrittlement of steel, controlled thermonuclear reaction first wall studies, and changed material properties caused by dissolved hydrogen. Hydrogen is the most difficult atomic species to analyze by traditional methods, but nuclear physics methods are particularly suited for this purpose. President of the Uzbek SSR Academy of Sciences P.K. Khabibullaev and Professor B.G. Skorodumov discuss in this book the characteristics of these methods, such as lower detection limits, selectivity in respect to different isotopes, accuracy, depth resolution and maximum detection depth. Examples of applications that are dealt with include the determination of material humidity, the dating of objects, the study of hydrogen diffusion including non-stationary processes, and the investigation of changes in material properties like superconductivity, plasticity and electrical properties due to contamination by hydrogen.
Neutron Radiography
Proceedings of the First World Conference, San Diego, California, December 7-10, 1981
