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Urdu/Hindi: An Artificial Divide
In a blow against the British Empire, Khan suggests that London artificially divided India's Hindu and Muslim populations by splitting their one language in two, then burying the evidence in obscure scholarly works outside the public view. All language is political -- and so is the boundary between one language and another. The author analyzes the origins of Urdu, one of the earliest known languages, and propounds the iconoclastic views that Hindi came from pre-Aryan Dravidian and Austric-Munda, not from Aryan's Sanskrit (which, like the Indo-European languages, Greek and Latin, etc., are rooted in the Middle East/Mesopotamia, not in Europe). Hindi's script came from the Aramaic system, simi...
The Sinking of INS Khukri: Survivor's Stories
9 December 1971. 8.45 p.m. Torpedoed by a Pakistani submarine, the INS Khukri sank within minutes. Along with the ship, 178 sailors and 18 officers made the supreme sacrifice. Last seen calmly puffing on his cigarette, Captain Mahendra Nath Mulla, captain of the Khukri, chose to go down with his ship. This defining moment of the 1971 war between India and Pakistan is the basis of Major General Ian Cardozo's attempt to understand what happened that day and why. Major General Cardozo brings fresh insight into the hellish ordeal by including the heartfelt accounts of the survivors and of the members of their families. These accounts transform the stereotypical understanding of the incident; they also supplement it. We glimpse fear, trauma and death at first hand. In the annals of war writing, General Cardozo humanizes this cataclysmic event as never before.
Physics and Technology of Silicon Carbide Devices
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Recent Trends in Physics of Material Science and Technology
This book discusses in detail the recent trends in Computational Physics, Nano-physics and Devices Technology. Numerous modern devices with very high accuracy, are explored In conditions such as longevity and extended possibilities to work in wide temperature and pressure ranges, aggressive media, etc. This edited volume presents 32 selected papers of the 2013 International Conference on Science & Engineering in Mathematics, Chemistry and Physics. The book is divided into three scientific Sections: (i) Computational Physics, (ii) Nanophysics and Technology, (iii) Devices and Systems and is addressed to Professors, post-graduate students, scientists and engineers taking part in R&D of nano-materials, ferro-piezoelectrics, computational Physics and devices system, and also different devices based on broad applications in different areas of modern science and technology.
Advances in Manufacturing and Industrial Engineering
This book presents selected peer reviewed papers from the International Conference on Advanced Production and Industrial Engineering (ICAPIE 2019). It covers a wide range of topics and latest research in mechanical systems engineering, materials engineering, micro-machining, renewable energy, industrial and production engineering, and additive manufacturing. Given the range of topics discussed, this book will be useful for students and researchers primarily working in mechanical and industrial engineering, and energy technologies.
Silicon Carbide
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport...
