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Parasitic Substrate Coupling in High Voltage Integrated Circuits
This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This...
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Charge-Based MOS Transistor Modeling
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear under...
Springer Handbook of Semiconductor Devices
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and ...
Simulation of Semiconductor Processes and Devices 2001
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Mosfet Modeling For Circuit Analysis And Design
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
VLSI-SoC: Advanced Topics on Systems on a Chip
This book contains extended and revised versions of the best papers that were presented during the fifteenth edition of the IFIP/IEEE WG10.5 International Conference on Very Large Scale Integration, a global System-on-a-Chip Design & CAD conference. The 15th conference was held at the Georgia Institute of Technology, Atlanta, USA (October 15-17, 2007). Previous conferences have taken place in Edinburgh, Trondheim, Vancouver, Munich, Grenoble, Tokyo, Gramado, Lisbon, Montpellier, Darmstadt, Perth and Nice. The purpose of this conference, sponsored by IFIP TC 10 Working Group 10.5 and by the IEEE Council on Electronic Design Automation (CEDA), is to provide a forum to exchange ideas and show industrial and academic research results in the field of microelectronics design. The current trend toward increasing chip integration and technology process advancements brings about stimulating new challenges both at the physical and system-design levels, as well in the test of these systems. VLSI-SoC conferences aim to address these exciting new issues.
Optical Engineering
Publishes papers reporting on research and development in optical science and engineering and the practical applications of known optical science, engineering, and technology.
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
Cryptography
Despite being 2000 years old, cryptography is still a very active field of research. New needs and application fields, like privacy, the Internet of Things (IoT), physically unclonable functions (PUFs), post-quantum cryptography, and quantum key distribution, will keep fueling the work in this field. This book discusses quantum cryptography, lightweight cryptography for IoT, PUFs, cryptanalysis, and more. It provides a snapshot of some recent research results in the field, providing readers with some useful tools and stimulating new ideas and applications for future investigation.
