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Understand the theory, design and applications of FD/SOI MOSFETs and 3-D FinFETs with this concise and clear guide to FD/UTB transistors. Topics covered include short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM, and nanoscale UTB CMOS performances.
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.
The book is a collection of high-quality peer-reviewed research papers presented at International Conference on Frontiers of Intelligent Computing: Theory and applications (FICTA 2016) held at School of Computer Engineering, KIIT University, Bhubaneswar, India during 16 - 17 September 2016. The book aims to present theories, methodologies, new ideas, experiences, applications in all areas of intelligent computing and its applications to various engineering disciplines like computer science, electronics, electrical, mechanical engineering, etc.