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Smart and Green Interfaces Conference - SGIC2015
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Program and the Book of Abstracts / Fourteenth Young Researchers' Conference Materials Sciences and Engineering, December 9-11, 2015, Belgrade, Serbia
Acknowledgement The editor and the publisher of the Book of abstracts are grateful to the Ministry of Education, Sciences and Technological Development of the Republic of Serbia for its financial support of this book and The Fourteenth Young Researchers’ Conference - Materials Sciences and Engineering, held in Belgrade, Serbia.
Integrated Devices for Artificial Intelligence and VLSI
With its in-depth exploration of the close connection between microelectronics, AI, and VLSI technology, this book offers valuable insights into the cutting-edge techniques and tools used in VLSI design automation, making it an essential resource for anyone seeking to stay ahead in the rapidly evolving field of VLSI design. Very large-scale integration (VLSI) is the inter-disciplinary science of utilizing advanced semiconductor technology to create various functions of computer system. This book addresses the close link of microelectronics and artificial intelligence (AI). By combining VLSI technology, a very powerful computer architecture confinement is possible. To overcome problems at dif...
Emerging Trends in TiO2 Photocatalysis and Applications
The semiconductor titanium dioxide (TiO2) has been evolved as a prototypical material to understand the photocatalytic process, and has been demonstrated for various photocatalytic applications such as pollutants degradation, water splitting, heavy metal reduction, CO2 conversion, N2 fixation, bacterial disinfection, etc. Rigorous photocatalytic studies on TiO2 have paved the way to understanding the various chemical processes involved and the physical parameters (optical and electrical) required to design and construct diverse photocatalytic systems. Accordingly, it has been realized that an effective photocatalyst should have ideal band edge potential, narrow band gap energy, reduced charg...
Institut „Vinča” 70 godina u nauci – Knjiga izvoda
Ovo je knjiga izvoda predavanja održanih tokom dvodnevnog skupa povodom obeležavanja 70 godina u nauci Instituta za nuklearne nauke „Vinča”. Ona ilustruju raznovrsnost i multidisciplinarnost te nauke i predstavljaju nepretenciozni presek trenutnih interesovanja i istraživanja na kojima se u „Vinči“ radi. U svojim istraživanjima „Vinča“ nikad nije sama, te je ovo takođe prilika da se pruži slika o toj saradnji, uzorima i povezanosti „Vinče“ sa važnim činiocima naučne misli u zemlji. This is a book of abstracts of lectures held at a two-day meeting honouring 70 years of science at Vinča Institute of Nuclear Sciences. They illustrate the variety and multidisciplinarity of that science and represent a tentative cross-section of Institute’s current preocupations and research. In research Vinča is never alone, so it is also an opportunity to give a glimpse into that collaboration, ideals and interconnection of Vinča with important factors of scientific thought in the country.
VINČA ANNUAL REPORT 2003
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TiO2 Photocatalysis
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Properties of Porous Silicon
A detailed insight into porous silicon and its diverse novel applications.
Defects in HIgh-k Gate Dielectric Stacks
The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
