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In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), ...
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation ...
This volume presents a systematic and mathematically accurate description and derivation of transport equations in solid state physics, in particular semiconductor devices.
This volume is composed of two parts: Mathematical and Numerical Analysis for Strongly Nonlinear Plasma Models and Exact Controllability and Observability for Quasilinear Hyperbolic Systems and Applications. It presents recent progress and results obtained in the domains related to both subjects without attaching much importance to the details of proofs but rather to difficulties encountered, to open problems and possible ways to be exploited. It will be very useful for promoting further study on some important problems in the future.
The book discusses some key scientific and technological developments in computational and applied partial differential equations. It covers many areas of scientific computing, including multigrid methods, image processing, finite element analysis and adaptive computations. It also covers software technology, algorithms and applications. Most papers are of research level, and are contributed by some well-known mathematicians and computer scientists. The book will be useful to engineers, computational scientists and graduate students.
This two-part volume represents the proceedings of the Fifth International Congress of Chinese Mathematicians, held at Tsinghua University, Beijing, in December 2010. The Congress brought together eminent Chinese and overseas mathematicians to discuss the latest developments in pure and applied mathematics. Included are 60 papers based on lectures given at the conference.
In recent years kinetic theory has developed in many areas of the physical sciences and engineering, and has extended the borders of its traditional fields of application. This monograph is a self-contained presentation of such recently developed aspects of kinetic theory, as well as a comprehensive account of the fundamentals of the theory. Emphasizing modeling techniques and numerical methods, the book provides a unified treatment of kinetic equations not found in more focused works. Specific applications presented include plasma kinetic models, traffic flow models, granular media models, and coagulation-fragmentation problems. The work may be used for self-study, as a reference text, or in graduate-level courses in kinetic theory and its applications.
Proceedings -- Computer Arithmetic, Algebra, OOP.
Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods. Contents:Modeling Electron Transport in MOSFET Devices: Evolution and State of the Art (A Abramo)Particle Models for Device Simulation ...