Welcome to our book review site go-pdf.online!
You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
Exploration Of A Nonlinear World: An Appreciation Of Howell Tong's Contributions To Statistics
This festschrift is dedicated to Professor Howell Tong on the occasion of his 65th birthday. With a Foreword written by Professor Peter Whittle, FRS, it celebrates Tong's path-breaking and tireless contributions to nonlinear time series analysis, chaos and statistics, by reprinting 10 selected papers by him and his collaborators, which are interleaved with 17 original reviews, written by 19 international experts.Through these papers and reviews, readers will have an opportunity to share many of the excitements, retrospectively and prospectively, of the relatively new subject of nonlinear time series. Tong has played a leading role in laying the foundation of the subject; his innovative and authoritative contributions are reflected in the review articles in the volume, which describe modern and related developments in the subject, including applications in many major fields such as ecology, economics, finance and others. This volume will be useful to researchers and students interested in the theory and practice of nonlinear time series analysis.
英華分韻撮要
None
Index Medicus
Vols. for 1963- include as pt. 2 of the Jan. issue: Medical subject headings.
Dong Zhongshu, a ‘Confucian’ Heritage and the Chunqiu Fanlu
The assumption that a system described as ‘Confucianism’ formulated by Dong Zhongshu became accepted as the norm during the Western Han dynasty (202 BCE – 9 CE) is challenged and his supposed authorship of the Chunqiu fanlu examined.
Radiation Defect Engineering
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
