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Law Dictionary
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Topics in Growth and Device Processing of III-V Semiconductors
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems. Contents:Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)Growth of Heterojunction Bipolar Transistors from Molecular BeamsHeteroepitaxyImplant Doping and IsolationRapid Thermal AnnealingWet and Dry Etching of III-V SemiconductorsHydrogen in Crystalline Semiconductors: III-V CompoundsHeterojunction Bipolar Transistors: Processing and DevicesNovel Heterostructure Field Effect Transistors Readership: Engineers and condensed matter physicists. keywords:Arsenide;Indium Phosphide;Processing;Semiconductors;Etching;Implantation;Contacts;Implant Isolation;Field Effect Transistors;GaAs-on-Si
Semiconductor Superlattices
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier–Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths. Contents: Growth and Characterization (K Fujiwara)Miniband Transport (A Sibille)Wannier–Stark Localization and Bloch Oscillations (F Agulló-Rueda & J Feldmann)Resonant Tunneling (H Grahn)Electric Field Domains (H Grahn). Readership: Physicists and materials scientists. keywords:Semiconductor Superlattices;Nanostructures;Fabrication;Miniband Transport;Bloch Oscillations;WannierâStark Localization;Resonant Tunneling;Electric-Field Domains;Non-Linear Transport;Optical Properties
Coplanar Microwave Integrated Circuits
The tools and techniques to fully leverage coplanar technology Coplanar Microwave Integrated Circuits sets forth the theoretical underpinnings of coplanar waveguides and thoroughly examines the various coplanar components such as discontinuities, lumped elements, resonators, couplers, and filters, which are essential for microwave integrated circuit design. Based on the results of his own research findings, the author effectively demonstrates the many advantages of coplanar waveguide technology for modern circuit design. Following a brief introductory chapter, the text thoroughly covers the material needed for successful design and realization of coplanar microwave circuits, including: * Fun...
Ultrafast Phenomena VII
Recent improvements in the performance of light sources, i.e. reduction in pulse length and increases in wavelength range and power levels, have led to ultrafast technology becoming a basic tool in a wide variety of scientific fields. This book describes the remarkable technological improvements and results of new applications in the natural sciences and various engineering fields.
