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Wide Energy Bandgap Electronic Devices
Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Gas Sensors
This book covers the whole range of gas sensing aspects starting from basics, synthesis, processing, characterization, and application developments. All sub-topics within the domain of gas sensors such as active materials, novel nanomaterials, working mechanisms, fabrication techniques, computational approach, and development of microsensors, and latest advancements such as the Internet of Things (IoT) in gas sensors, and nanogenerators, are explained as well. Related manufacturing sections and proposed direction of future research are also reviewed. Features: Covers detailed state-of-the-art specific chemiresistive sensing materials. Presents novel nanomaterial platforms and concepts for resistive gas sensing. Reviews pertinent aspects of smart sensors and IoT sensing. Explains nanotechnology-enabled experimental findings, and future directions of smart gas sensing technology. Explores implication of latest advancements such as IoT in gas sensors, and nanogenerators. This book is aimed at academic researchers and professionals in sensors and actuators, nanotechnology, and materials science.
Fundamentals of III-V Semiconductor MOSFETs
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key ch...
Nitride Semiconductor Devices
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3
This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.
Progress in Advanced Materials and Processes
Volume is indexed by Thomson Reuters CPCI-S (WoS). These proceedings, PROGRESS IN ADVANCED MATERIALS AND PROCESSES, include selected papers which were presented at the Fifth Yugoslav Materials Research Society Conference (Yu-MRS Meeting), held in Herceg Novi, Yugoslavia, September 15-19th, 2003. The previous four conferences were also held there, and the Yugoslav Materials Research Society was formed as a non-governmental, non-profit, scientific association, whose main goals and tasks are to encourage creativity in materials science and engineering, to achieve the harmonic coordination of these fields in Serbia and Montenegro, and to link these researches to analogous activities carried out ...
Official Gazette
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Optoelectronics
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Advances in Solid State Physics
Volume 43 of Advances in Solid State Physics contains the written versions of most of the plenary and invited lectures of the Spring Meeting of the Condensed Matter Physics section of the Deutsche Physikalische Gesellschaft held from March 24 to 28, 2003 in Dresden, Germany. Many of the topical talks given at the numerous and very lively symposia are also included. They covered an extremely interesting selection of timely subjects. Thus the book truly reflects the status of the field of solid state physics in 2003, and explains its attractiveness, not only in Germany but also internationally.
