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Wide Energy Bandgap Electronic Devices
Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Fundamentals of III-V Semiconductor MOSFETs
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key ch...
Nitride Semiconductor Devices
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Gas Sensors
This book covers the whole range of gas sensing aspects starting from basics, synthesis, processing, characterization, and application developments. All sub-topics within the domain of gas sensors such as active materials, novel nanomaterials, working mechanisms, fabrication techniques, computational approach, and development of microsensors, and latest advancements such as the Internet of Things (IoT) in gas sensors, and nanogenerators, are explained as well. Related manufacturing sections and proposed direction of future research are also reviewed. Features: Covers detailed state-of-the-art specific chemiresistive sensing materials. Presents novel nanomaterial platforms and concepts for resistive gas sensing. Reviews pertinent aspects of smart sensors and IoT sensing. Explains nanotechnology-enabled experimental findings, and future directions of smart gas sensing technology. Explores implication of latest advancements such as IoT in gas sensors, and nanogenerators. This book is aimed at academic researchers and professionals in sensors and actuators, nanotechnology, and materials science.
State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3
This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.
Progress in Advanced Materials and Processes
YUOCMAT V Proceedings of the fifth Conference of Yugoslav Materials Research Society, Herceg, Novi, Serbia and Montenegro, September 15-19, 2003
Advancing Silicon Carbide Electronics Technology I
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; ove...
