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Design Automation and Applications for Emerging Reconfigurable Nanotechnologies
This book is a single-source solution for anyone who is interested in exploring emerging reconfigurable nanotechnology at the circuit level. It lays down a solid foundation for circuits based on this technology having considered both manual as well as automated design flows. The authors discuss the entire design flow, consisting of both logic and physical synthesis for reconfigurable nanotechnology-based circuits. The authors describe how transistor reconfigurable properties can be exploited at the logic level to have a more efficient circuit design flow, as compared to conventional design flows suited for CMOS. Further, the book provides insights into hardware security features that can be intrinsically developed using the runtime reconfigurable features of this nanotechnology.
Materials for Information Technology
This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
Synaptic Circuits and Functions in Bio-inspired Integrated Architectures
Based upon the most advanced human-made technology on this planet, CMOS integrated circuit technology, this dissertation examines the design of hardware components and systems to establish a technological foundation for the application of future breakthroughs in the intersection of AI and neuroscience. Humans have long imagined machines, robots, and computers that learn and display intelligence akin to animals and themselves. To advance the development of these machines, specialised research in custom-built hardware designed for specific types of computation, which mirrors the structure of powerful biological nervous systems, is especially important. This dissertation is driven by the quest ...
Nonlinear Dynamics of Electronic Systems
This book constitutes the refereed proceedings of the 22nd International Conference on Nonlinear Dynamics of Electronic Systems, NDES 2014, held in Albena, Bulgaria, in July 2014. The 47 revised full papers presented were carefully reviewed and selected from 65 submissions. The papers are organized in topical sections on nonlinear oscillators, circuits and electronic systems; networks and nonlinear dynamics and nonlinear phenomena in biological and physiological systems.
Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride
This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on in...
Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Negative Capacitance in Ferroelectric Materials
This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.
Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation
Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of ...
Ferroelectric-Gate Field Effect Transistor Memories
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeR...
Nonlinear Circuits and Systems with Memristors
This book presents a new approach to the study of physical nonlinear circuits and advanced computing architectures with memristor devices. Such a unified approach to memristor theory has never been systematically presented in book form. After giving an introduction on memristor-based nonlinear dynamical circuits (e.g., periodic/chaotic oscillators) and their use as basic computing analogue elements, the authors delve into the nonlinear dynamical properties of circuits and systems with memristors and present the flux-charge analysis, a novel method for analyzing the nonlinear dynamics starting from writing Kirchhoff laws and constitutive relations of memristor circuit elements in the flux-cha...
