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Hot Electrons in Semiconductors
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further develo...
Molecular and Nano Electronics: Analysis, Design and Simulation
The aim of Molecular and Nano Electronics: Analysis, Design and Simulation is to draw together contributions from some of the most active researchers in this new field in order to illustrate a theory guided-approach to the design of molecular and nano-electronics. The field of molecular and nano-electronics has driven solutions for a post microelectronics era, where microelectronics dominate through the use of silicon as the preferred material and photo-lithography as the fabrication technique to build binary devices (transistors). The construction of such devices yields gates that are able to perform Boolean operations and can be combined with computational systems, capable of storing, proc...
Theory of Transport Properties of Semiconductor Nanostructures
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent develo...
Advances in Computers
Advances in Computers covers new developments in computer technology. Most chapters present an overview of a current subfield within computers, with many citations, and often include new developments in the field by the authors of the individual chapters. Topics include hardware, software, theoretical underpinnings of computing, and novel applications of computers. This current volume includes six chapters on nanotechnology emphasizing its use in biological applications. The book series is a valuable addition to university courses that emphasize the topics under discussion in that particular volume as well as belonging on the bookshelf of industrial practitioners who need to implement many of the technologies that are described. - Nanotechnology in biology - Development of miniature computing devices - Social and legal implications of nanotechnology
High Magnetic Fields in Semiconductor Physics II
This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fiel...
Advanced Device Modeling and Simulation
Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.
Computational Electronics
Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. Computational electronics, as a part of the general Technology Computer Aided Design (TCAD) field, has become increasingly important as the cost of semiconductor manufacturing has grown exponentially, with a concurrent need to reduce the time from design to manufacture. The motivation for this volume is the need within the modeling and simulation community for a comprehensive text which spans basic drift-diffusion modeling, through energy balance and hydrodynamic models, and finally particle based simulation. One ...
Applied Physics of Carbon Nanotubes
The book describes the state-of-the-art in fundamental, applied and device physics of nanotubes, including fabrication, manipulation and characterization for device applications; optics of nanotubes; transport and electromechanical devices and fundamentals of theory for applications. This information is critical to the field of nanoscience since nanotubes have the potential to become a very significant electronic material for decades to come. The book will benefit all all readers interested in the application of nanotubes, either in their theoretical foundations or in newly developed characterization tools that may enable practical device fabrication.
Negative Differential Resistance and Instabilities in 2-D Semiconductors
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effect...
