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玉兔一家的中秋节 Celebrating Mid-Autumn Festival on the Moon
What beverages do “Tak Giu” and “Diao Yu” refer to? Who were the Samsui Women? Why do Chinese Singaporean families gather to toss yusheng every Lunar New Year? How and why did their ancestors migrate to Singapore in the first place? Discover all that and more through ten fun and educational storybooks, written and illustrated by Ngee Ann Polytechnic’s Chinese Studies students with guidance from award-winning children’s book illustrator Lee Kow Fong! Complete with activity guides and downloadable learning resources for educators, this series is a must-have for any child’s cultural education. Filled with insights from the Singapore Chinese Cultural Centre’s exhibition, this exc...
Makan 去咯! Go Makan! (2022 Edition - PDF)
What beverages do “Tak Giu” and “Diao Yu” refer to? Who were the Samsui Women? Why do Chinese Singaporean families gather to toss yusheng every Lunar New Year? How and why did their ancestors migrate to Singapore in the first place? Discover all that and more through ten fun and educational storybooks, written and illustrated by Ngee Ann Polytechnic’s Chinese Studies students with guidance from award-winning children’s book illustrator Lee Kow Fong! Complete with activity guides and downloadable learning resources for educators, this series is a must-have for any child’s cultural education. Filled with insights from the Singapore Chinese Cultural Centre’s exhibition, this exc...
Understanding of NiO-based Unipolar Resistive Switching from First Principle Simulations to Macroscopic Models
As NAND Flash memory technology is facing challenging issues such as electronic coupling between adjacent cells and high coupling of the control gate with floating gate in scaling down to and beyond 16nm technology node, new functional devices or materials has been explored to continue consecutive development of memory technology beyond 16nm technology node. One of the new emerging non-volatile memories is resistance change random access memory(ReRAM) possibly meeting the requirements to replace NAND Flash; i.e., low cost, simple structure, promising 8nm technology node, low power dissipation, high endurance, possible integration in crossbar arrays in 3D on top of silicon base CMOS ICs. In R...
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