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Microelectronics Technology and Devices
  • Language: en
  • Pages: 574

Microelectronics Technology and Devices

None

Nanotechnology and Nanoelectronics
  • Language: en
  • Pages: 277

Nanotechnology and Nanoelectronics

Split a human hair thirty thousand times, and you have the equivalent of a nanometer. The aim of this work is to provide an introduction into nanotechnology for the s- entifically interested. However, such an enterprise requires a balance between comprehensibility and scientific accuracy. In case of doubt, preference is given to the latter. Much more than in microtechnology – whose fundamentals we assume to be known – a certain range of engineering and natural sciences are interwoven in nanotechnology. For instance, newly developed tools from mechanical engine- ing are essential in the production of nanoelectronic structures. Vice versa, - chanical shifts in the nanometer range demand pi...

High Purity Silicon VIII
  • Language: en
  • Pages: 454

High Purity Silicon VIII

"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the Electrochemical Society, October 3-8, 2004"--Pref.

High Purity Silicon 10
  • Language: en
  • Pages: 370

High Purity Silicon 10

The issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and application of high purity silicon in either bulk or epitaxial form. The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and high resistivity silicon for superior device performances. Device and circuit aspects related to the application of devices fabricated on high resistivity silicon wafers will also be addressed. Special attention will be given to alternative and high-mobility substrates and their material and device aspects.

Optical Properties of Diamond
  • Language: en
  • Pages: 508

Optical Properties of Diamond

This handbook is the most comprehensive compilation of data on the optical properties of diamond ever written. It presents a multitude of data previously for the first time in English. The author provides quick access to the most comprehensive information on all aspects of the field.

Crystalline Defects and Contamination
  • Language: en
  • Pages: 202

Crystalline Defects and Contamination

None

Heterojunction Solar Cells (a-Si/c-Si)
  • Language: en
  • Pages: 280

Heterojunction Solar Cells (a-Si/c-Si)

The main focus of the present work is related to the optimization of heterojunction solar cells. The key roles in obtaining high efficient heterojunction solar cells are mainly the plasma enhanced chemical vapor deposition of very low defect layers, and the sufficient surface passivation of all interfaces. In heterojunction solar cells, the a-Si: H/c-Si hetero-interface is of significant importance, since the hetero-interface characteristics directly affect the junction properties and thus solar cell efficiency. In this work, the deposition and film properties of various hydrogenated amorphous silicon alloys, such as a-SiC: H, a-SiO_x: H, and muc-Si: H (standard a-Si: H is used as reference), are employed. Special attention is paid to (i) the front and back surface passivation of the bulk material by high-quality wide-gap amorphous silicon suboxides (a-SiO_x: H), and (ii) the influence of wide-gap high-quality a-Si- and muc-Si-based alloys for use as emitter and back-surface-

Piezoresistive Effect of p-Type Single Crystalline 3C-SiC
  • Language: en
  • Pages: 156

Piezoresistive Effect of p-Type Single Crystalline 3C-SiC

  • Type: Book
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  • Published: 2017-04-06
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  • Publisher: Springer

This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as...

Hot-Carrier Effects in MOS Devices
  • Language: en
  • Pages: 329

Hot-Carrier Effects in MOS Devices

  • Type: Book
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  • Published: 1995-11-28
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  • Publisher: Elsevier

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot ca...

Physics, Chemistry And Application Of Nanostructures: Reviews And Short Notes - Proceedings Of The International Conference On Nanomeeting 2009
  • Language: en
  • Pages: 669

Physics, Chemistry And Application Of Nanostructures: Reviews And Short Notes - Proceedings Of The International Conference On Nanomeeting 2009

The book presents invited reviews and original short notes with recent results obtained in fabrication study and application of nanostructures, which are promising for new generations of electronic and optoelectronic devices.Recent developments in nanotechnology, nanoelectronics, spintronics, nanophotonics, nanosensorics and nanobiology are presented.