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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
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The first introductory textbook to explain the properties and performance of practical nanotube devices and related applications.
The invariable motif for analog design is to explore the new circuit topologies, architectures and CAD technologies to overcome the design challenges coming from the new applications and new fabrication technologies. In this book, a new architecture for a SAR ADC is proposed to eliminate the process mismatches and minimize the errors. A collection of DG-MOSFET based analog/RFICs present the excellent performance; the automated system for a passive filter circuits design is presented with the local searching engaging; interval analysis is used to solve some problems for linear and nonlinear analog circuits and a symbolic method is proposed to solve the testability problem.
Power Aware Design Methodologies was conceived as an effort to bring all aspects of power-aware design methodologies together in a single document. It covers several layers of the design hierarchy from technology, circuit logic, and architectural levels up to the system layer. It includes discussion of techniques and methodologies for improving the power efficiency of CMOS circuits (digital and analog), systems on chip, microelectronic systems, wirelessly networked systems of computational nodes and so on. In addition to providing an in-depth analysis of the sources of power dissipation in VLSI circuits and systems and the technology and design trends, this book provides a myriad of state-of-the-art approaches to power optimization and control. The different chapters of Power Aware Design Methodologies have been written by leading researchers and experts in their respective areas. Contributions are from both academia and industry. The contributors have reported the various technologies, methodologies, and techniques in such a way that they are understandable and useful.
The use of neural networks is permeating every area of signal processing. They can provide powerful means for solving many problems, especially in nonlinear, real-time, adaptive, and blind signal processing. The Handbook of Neural Network Signal Processing brings together applications that were previously scattered among various publications to provide an up-to-date, detailed treatment of the subject from an engineering point of view. The authors cover basic principles, modeling, algorithms, architectures, implementation procedures, and well-designed simulation examples of audio, video, speech, communication, geophysical, sonar, radar, medical, and many other signals. The subject of neural networks and their application to signal processing is constantly improving. You need a handy reference that will inform you of current applications in this new area. The Handbook of Neural Network Signal Processing provides this much needed service for all engineers and scientists in the field.
Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diod...