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Physics, Chemistry And Applications Of Nanostructures - Proceedings Of The International Conference Nanomeeting - 2015
  • Language: en
  • Pages: 652

Physics, Chemistry And Applications Of Nanostructures - Proceedings Of The International Conference Nanomeeting - 2015

This book presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the new generation of electronic, optoelectronic and energy conversion devices. They present achievements discussed at Special Sessions 'Frontiers of Two-Dimensional Crystals', 'Nanoelectromagnetics' and Belarus-Korea Workshop 'Frontiers of Advanced Nanodevices' organized within Nanomeeting 2015.Governing exciting and relatively new topics such as fast-progressing nanoelectronics and optoelectronics, molecular electronics and spintronics, nanophotonics, nanosensorics and nanoenergetics as well as nanotechnology and quantum processing of information, this book gives readers a more complete understanding of the practical uses of nanotechnology and nanostructures.

Physics, Chemistry And Applications Of Nanostructures - Proceedings Of The International Conference Nanomeeting – 2013
  • Language: en
  • Pages: 667

Physics, Chemistry And Applications Of Nanostructures - Proceedings Of The International Conference Nanomeeting – 2013

This book presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the next generation of electronic, optoelectronic and energy conversion devices.Covering exciting and relatively new topics such as fast-progressing nanoelectronics and optoelectronics, molecular electronics and spintronics, nanophotonics, nanosensorics and nanoenergetics as well as nanotechnology and quantum processing of information, this book gives readers a more complete understanding of the practical uses of nanotechnology and nanostructures.

Surface Science Reports
  • Language: en
  • Pages: 676

Surface Science Reports

  • Type: Book
  • -
  • Published: 2002
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  • Publisher: Unknown

None

Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis
  • Language: en
  • Pages: 447

Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis

Many books are available that detail the basic principles of the different methods of surface characterization. On the other hand, the scientific literature provides a resource of how individual pieces of research are conducted by particular labo- tories. Between these two extremes the literature is thin but it is here that the present volume comfortably sits. Both the newcomer and the more mature scientist will find in these chapters a wealth of detail as well as advice and general guidance of the principal phenomena relevant to the study of real samples. In the analysis of samples, practical analysts have fairly simple models of how everything works. Superimposed on this ideal world is an understanding of how the parameters of the measurement method, the instrumentation, and the char- teristics of the sample distort this ideal world into something less precise, less controlled, and less understood. The guidance given in these chapters allows the scientist to understand how to obtain the most precise and understood measu- ments that are currently possible and, where there are inevitable problems, to have clear guidance as the extent of the problem and its likely behavior.

Defects in HIgh-k Gate Dielectric Stacks
  • Language: en
  • Pages: 495

Defects in HIgh-k Gate Dielectric Stacks

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Magnetism: A Synchrotron Radiation Approach
  • Language: en
  • Pages: 472

Magnetism: A Synchrotron Radiation Approach

This volume contains the edited lectures of the fourth Mittelwihr school on "Magnetism and Synchrotron Radiation". This series of events introduces graduate students and nonspecialists from related disciplines to the field of magnetism and magnetic materials with emphasis on synchrotron radiation as an experimental tool of investigation. These lecture notes present in particular the state of the art regarding the analysis of magnetic properties of new materials.

Physics, Chemistry and Application of Nanostructures
  • Language: en
  • Pages: 667

Physics, Chemistry and Application of Nanostructures

This book presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the next generation of electronic, optoelectronic and energy conversion devices. Covering exciting and relatively new topics such as fast-progressing nanoelectronics and optoelectronics, molecular electronics and spintronics, nanophotonics, nanosensorics and nanoenergetics as well as nanotechnology and quantum processing of information, this book gives readers a more complete understanding of the practical uses of nanotechnology and nanostructures.

Discontinuous Phase Transitions In Condensed Matter: Symmetry Breaking In Bulk Martensite, Quasiperiodic And Low-dimensional Nanostructures
  • Language: en
  • Pages: 469

Discontinuous Phase Transitions In Condensed Matter: Symmetry Breaking In Bulk Martensite, Quasiperiodic And Low-dimensional Nanostructures

Discontinuous (first-order) phase transitions constitute the most fundamental and widespread type of structural transitions existing in Nature, forming a large majority of the transitions found in elemental crystals, alloys, inorganic compounds, minerals and complex fluids. Nevertheless, only a small part of them, namely, weakly discontinuous transformations, were considered by phenomenological theories, leaving aside the most interesting from a theoretical point of view and the most important for application cases. Discontinuous Phase Transitions in Condensed Matter introduces a density-wave approach to phase transitions which results in a unified, symmetry-based, model-free theory of the w...

Graphene
  • Language: en
  • Pages: 321

Graphene

Graphene: Important Results and Applications provides an overview on the latest research in graphene production and applications. The most advanced methods of production, including chemical vapor deposition, reduction of graphene oxide, and detonation reaction are explored, as is current research results on the unique nature of graphene and its types, including morphology and thickness, mechanical properties, electrical conductivity, elastic properties of 2D and 3D structures, and more. Chapters covering the dispersion of graphene into the polymer matrix and chemical modifications and their potential applications are also featured. The book concludes with sections focusing on current and future applications.

Electrochemistry of Silicon and Its Oxide
  • Language: en
  • Pages: 525

Electrochemistry of Silicon and Its Oxide

It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical proc...