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Semiconductor Material and Device Characterization
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterizat...
The Physics of Glaciers
This updated and expanded version of the second edition explains the physical principles underlying the behaviour of glaciers and ice sheets. The text has been revised in order to keep pace with the extensive developments which have occurred since 1981. A new chapter, of major interest, concentrates on the deformation of subglacial till. The book concludes with a chapter on information regarding past climate and atmospheric composition obtainable from ice cores.
Semiconductor Heterojunctions
Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers. Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then introduced to the energy band profiles of isotype and anisotype heterojunctions, the practical aspects of their fabrication and characterization, and their electronic and optoelectronic properties. Some methods used in the preparation of heterojunctions are also described, including the chemical method, solution growth method, alloying method, and sputtering method. The remaining chapters focus on the characterization of the grown layers, examples of heterojunction devices, and experimental work on heterojunctions. This monograph is intended for research workers and graduate students.
Dielectric Phenomena in Solids
The only available, comprehensive reference on dielectric phenomena in solids.
Topics in Growth and Device Processing of III-V Semiconductors
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
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Compound and Josephson High-Speed Devices
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initial...
