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Spontaneous Ordering in Semiconductor Alloys
  • Language: en
  • Pages: 483

Spontaneous Ordering in Semiconductor Alloys

The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technol...

Physics of Negative Refraction and Negative Index Materials
  • Language: en
  • Pages: 380

Physics of Negative Refraction and Negative Index Materials

This book deals with the subject of optical and electronic negative refraction (NR) and negative index materials NIM). Diverse approaches for achieving NR and NIM are covered, such as using photonic crystals, phononic crystals, split-ring resonators (SRRs) and continuous media, focusing of waves, guided-wave behavior, and nonlinear effects. It is perhaps the most comprehensive book on the new class of negative refraction materials, covering all aspects of negative refraction and negative index materials.

Handbook of Luminescent Semiconductor Materials
  • Language: en
  • Pages: 460

Handbook of Luminescent Semiconductor Materials

  • Type: Book
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  • Published: 2016-04-19
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  • Publisher: CRC Press

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to stud

Bismuth-Containing Compounds
  • Language: en
  • Pages: 383

Bismuth-Containing Compounds

Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

Photovoltaic Energy Program Contract Summary: Fiscal Year 2000
  • Language: en
  • Pages: 335
Raman Scattering on Emerging Semiconductors and Oxides
  • Language: en
  • Pages: 172

Raman Scattering on Emerging Semiconductors and Oxides

  • Type: Book
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  • Published: 2024-09-16
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  • Publisher: CRC Press

Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: • SiC and IV-IV semiconductors, • III-GaN and nitride semiconductors, • III-V and II-VI semiconductors, • ZnO-based and GaO-based semiconducting oxides, • Graphene, ferroelectric oxides, and other emerging materials, • Wide-bandgap semiconductors of SiC, GaN, and ZnO, and • Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene. Key achievements from the author and collaborators in the above fields a...

Energy Materials Coordinating Committe (EMaCC): Fiscal Year 1999 Annual Technical Report
  • Language: en
  • Pages: 221
Energy Materials Coordinating Committe (EMaCC): Fiscal Year 2000 Annual Technical Report
  • Language: en
  • Pages: 230