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Low Flux Nuclear Radiation Effects on Electronic Components (BMI-LF-2)
The second of a series of irradiation experiments on electronic devices intended for SNAP reactor control systems is described. Several diode and transistor types, sensistors, capacitors, and an oscillator from a prototype SNAP 10A Startup Controller were irradiated to 3 x 1019 nvt (>0.1 Mev) and 5 x 10 r (gamma) at the Battelle Memorial Institute Research Reactor. Results are presented of in-pile measurements of the critical electrical characteristics, in the form of graphs produced automatically by a computer peripheral plotting facility.
Advances in Cryogenic Engineering Materials
The Third International Cryogenic Materials Conference (ICMC) was held in Madison, Wisconsin, in conjunction with the Cryogenic Engineering Conference (CEC) in August 1979. The University of Wisconsin hosted the two conferences in an excellent manner and deserves special recognition and praise. The synergism produced by conducting the two conferences simultaneously continues to be strong. Materials remain a demanding challenge and, in some cases, an obstacle to effective application of cryogenic technology. The association of materials specialists and cryogenic engineers every other year centers their attention on the most needed areas of research. The present ICMC Board met during the conference and elected two new members, E. W. Collings (U. S.) and D. Evans (England). The board voted to conduct two smaller, special-topic conferences in 1980. These are Filamentary A15 Superconductors, which was held at Brookhaven National Laboratories, Upton, New York in May 1980, and Fundamentals of Nonmetallics and Composites at Low Temperatures, held in Geneva, Switzerland in August 1980. The 1981 CEC/ICMC will be held August 10 through 14 in San Diego, California.
