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Electron Tunneling in Chemistry
In Volume 30, an attempt is made to consider comprehensively both theoretical and experimental data that have been obtained to date on electron tunneling reactions involving chemical compounds of various classes, and to discuss the role played by these reactions in different areas of chemistry. The discussion of the above problem is preceded by a review of data on tunneling phenomena in nuclear physics, atomic physics, solid-state physics, as well as on the tunneling effects in chemistry that go beyond the framework of the main subject of this monograph. This review is included to acquaint the reader with the role of tunneling phenomena in physics and chemistry as a whole, to show how diversified the kingdom of tunneling phenomena is, and to see more distinctly the similarities and the differences between electron tunneling in chemical reactions and other tunnel phenomena.
Single-Electron Tunneling and Mesoscopic Devices
Single-electron tunneling (SET) and related phenomena have recently come to be considered as "hot topics". This also became apparent when we organized the 4th International Conference on Superconducting and Quantum Effect Devices and Their Applications, SQUID'91, which was held June 18-21, 1991, in Berlin, Germany. Impressed by the number of contributions dedicated to the new physics of ultrasmall devices, we deemed it appropriate to devote this volume of the Springer Series in Electronics and Photonics to these specialized proceedings. The other contributions presented at SQUID'91, which are more conventional in character but nevertheless contain excitingly innovative results, are published...
Single Charge Tunneling
The field of single charge tunneling comprises of phenomena where the tunneling of a microscopic charge, usually carried by an electron or a Cooper pair, leads to macro scopically observable effects. The first conference entirely devoted to this new field was the NATO Advanced Study Institute on Single Charge Tunneling held in Les Hauches, France, March 5-15, 1991. This book contains a series of tutorial articles based on lectures presented at the meeting. It was intended to provide both an introduction for nonexperts and a valuable reference summarizing the state of the art of single charge tun neling. A complementary publication with contributions by participants of the NATO Advanced Study...
Quantum Mechanical Tunnelling and Its Applications
This book presents a new approach to quantum mechanical tunnelling and its applications to various fields of physics. The conventional concepts of this phenomenon, which are based on a time-dependent or time-independent approach, are inadequate in providing explanations for 1) the limit of resolution of field-emission microscope, 2) the Esaki-Integral representation the tunnelling I-V characteristics of tunnel diodes, 3) the Josephson effect, 4) the tunnelling time, etc. The new theory presented here not only provides adequate explanation for all the above-mentioned effects but also gives an accurate expression for tunnelling current density which predicts results closer to the experimentall...
Tunneling Phenomena in Solids
The aim of this volume is to provide advanced predoctoral students and young postdoctoral physicists with an opportunity to study the concepts of tunneling phenomena in solids and the theoretical and experimental techniques for their investigation. The contributions are primarily tutorial in nature, covering theoretical and experimental aspects of electron tunnel ing in semiconductors, metals, and superconductors, and atomic tunneling in solids. The work is based upon the lectures delivered at the Advanced Study Institute on "Tunneling Phenomena in Solids," held at the Danish A. E. C. Research Establishment, Riso, Denmark, June 19-30, 1967. Sponsored by the Danish Atomic Energy Commission, t...
Quantum Tunneling and Field Electron Emission Theories
Quantum tunneling is an essential issue in quantum physics. Especially, the rapid development of nanotechnology in recent years promises a lot of applications in condensed matter physics, surface science and nanodevices, which are growing interests in fundamental issues, computational techniques and potential applications of quantum tunneling. The book involves two relevant topics. One is quantum tunneling theory in condensed matter physics, including the basic concepts and methods, especially for recent developments in mesoscopic physics and computational formulation. The second part is the field electron emission theory, which covers the basic field emission concepts, the Fowler Nordheim t...
Tunnelling and Negative Resistance Phenomena in Semiconductors
Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction ...
A Quantum Measurement Approach to Tunnelling
This book presents a new approach to analyze quantum mechanical tunnelling of particles across potential barriers. The conventional concepts of this phenomenon, which are based on a time-in-dependent or a time-dependent perturbation approach are inadequate in furnishing explanations to a number of effects, e.g. (i) the limit of resolution of a field emission macroscope (FEM), (ii) Esaki integral, representing the I-V characteristics of solid-state junctions, (iii) Josephson effect, (iv) tunnelling time, (v) tunnelling current density etc. The new analysis presented here not only provides adequate explanations to all the above mentioned effects but also furnishes an appropriate expression for the tunnelling current density which yields results closer to experimentally observed values.
Resonant Tunneling in Semiconductors
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and confi...
Inelastic Electron Tunneling Spectroscopy
Inelastic Electron Tunneling Spectroscop~ or lETS, provides a unique technique for electronically monitoring the vibrational modes of molecul (;5 adsorbed on a metal oxide surface. Since the discovery of the phenomena by JAKLEVIC and LM1BE in 1966, lETS has been developed by a number of scientists as a method for studying the surface chemistry of molecular species adsorbed on aluminum oxide. Recent applications of lETS include investigations of physical and chemical adsorption of hydrocarbons, studies of catalysis by metal particles, detection and identification of trace substances in air and water, and studies of biological molecules and electron damage to such molecules. lETS has been empl...
