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Semiconductors
And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers ...
Thin Films From Free Atoms and Particles
Thin Films from Free Atoms and Particles is an eight-chapter text that describes the primary reaction modes of atoms or coordination-deficient particles. This book presents first an introduction to free atoms and particles, followed by a chapter describing the embryonic growth of films, such as dimers, trimers, and other small telomers formed and detected. The next chapters discuss the understanding of discharge processes for forming free atoms and particles. The remaining chapters deal with the technology, techniques, and materials in thin films. Physicists, engineers, materials scientists, and chemists will find this book of great value.
Business Japan
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Silicon Carbide and Related Materials - 1999
Proceedings of the International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, Oct. 10-15, 1999
Silicon Carbide and Related Materials 2004
ECSCRM2004 Proceedings of the 5th Euopean Conference on Silicon Carbide and Related Materials, August 31 - September 4, 2004, Bologna, Italy
SiC Power Materials
This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
Silicon Carbide
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport...
