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Silicon Carbide
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Polarization Effects in Semiconductors
This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.
Compound Semiconductors 1998
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Scientific Bulletin
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SiC Power Materials
This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
Silicon Carbide, A Review of Fundamental Questions and of Applications to Current Device Technology
This collection of about 50 papers gives a detailed review of the recent developments in the rapidly advancing field of silicon carbide research. The contributions cover the whole field from theoretical modelling, analysis of crystal growth and characterization of defects through to the processing and to the applications in device technology.
Thin Films From Free Atoms and Particles
Thin Films from Free Atoms and Particles is an eight-chapter text that describes the primary reaction modes of atoms or coordination-deficient particles. This book presents first an introduction to free atoms and particles, followed by a chapter describing the embryonic growth of films, such as dimers, trimers, and other small telomers formed and detected. The next chapters discuss the understanding of discharge processes for forming free atoms and particles. The remaining chapters deal with the technology, techniques, and materials in thin films. Physicists, engineers, materials scientists, and chemists will find this book of great value.
