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Advanced Semiconductor Devices
This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many firsts and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and hot off the press results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.
High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Nanostructures and Nanotechnology
A carefully developed textbook focusing on the fundamental principles of nanoscale science and nanotechnology.
Amorphous Silicon and Related Materials
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area. Contents:Structural Aspects:Structural Heterogeneities in Device-Quality Amorphous Hydrogenated Semiconductors (J A Reimer & M A Petrich)Local Structure of Dopants in Hydrogenated Amorphous Silicon (J B Boyce & S E Ready)Plasma Deposition of Amorphous and Crystalline Silicon: The Effect of Hydrogen on the Growth, Structure Electronic Properties (C C Tsai)Defects and Defect Dynamics:Thermal Equilibrium Effects in Doped Hydro-genated Amorphous Silicon (J Kakalios & R A Street)Kin...
Solar Energy
'Solar Energy' is for the beginner involved in solar energy or a related field, or for someone wanting to gain a broader perspective of solar energy technologies. An introduction to all aspects of solar energy, from photovoltaic devices to active and passive solar thermal energy conversion is presented, giving both a detailed and a broad perspective of the field.
Silicon-Germanium Carbon Alloys
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
