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Nikkei Microdevices' 2006 report on flat panel display (FPD) industry includes: -Exclusive in-depth interviews with 28 top executives in the industry -Over 250 information-packed figures, tables and pictures -Proprietary intelligence not available anywhere else In 2006, competitive conditions in the flat panel display (FPD) industry will change significantly. The era in which competition was primarily based on increasing investment and glass substrate sizes is over. Henceforth, overall capability, including parts/material strategy and equipment strategy, will become the decisive factor. By 2010, parts and material costs will account for 80% of the total cost of large-size LCD panels, which will drive future market expansions; thus, parts and materials will make up most of the value addition in panels. Leading panel makers are starting to reinforce their cooperative relationships with parts and material makers, as well as with equipment makers.
Corning Incorporated Patent Landscape Analysis – January 1, 1994 to December 31, 2013
The following analysis illustrates the underlying trends and relationships of U.S. issued patents of the subject company. The analysis employs two frequently used patent classification methods: US Patent Classification (UPC) and International Patent Classification (IPC). Aside from assisting patent examiners in determining the field of search for newly submitted patent applications, the two classification methods play a pivotal role in the characterization and analysis of technologies contained in collections of patent data. The analysis also includes the company’s most prolific inventors, top cited patents as well as foreign filings by technology area.
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Amorphous and Nanocrystalline Silicon-Based Films - 2003: Volume 762
Amorphous silicon technology has been the subject of symposia every year since 1984. This remarkable longevity is due to the continuous emergence of new scientific questions and new technological challenges for silicon thin films. Earlier there was a strong emphasis on methods to achieve high deposition rates using plasma or hot-wire chemical vapor deposition, and on the properties and applications of nanocrystalline silicon films, which for example have been incorporated into stacked a-Si:H/nc-Si:H solar cells. The papers appearing in this book are sorted under six chapter headings on the basis of subject matter. Chapter I is concerned with amorphous network structures, electronic metastability, defects, and photoluminescence. Chapter II focuses on thin-film transistors and imager arrays. Chapter III covers solar cells. Chapter IV addresses growth mechanisms, hot-filament CVD, and nc-Si:H growth. Chapter V contains all remaining topics in film growth, especially those related to devices. Finally, Chapter VI focuses on crystallized film.
