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Manuel Cardona
This book pays tribute to an extraordinary researcher and personality, Manuel Cardona. He had significant influence in the development of science and inside the scientific community. The book consists of contributions by former collaborators and students of Prof. Manuel Cardona. The short contributions deal with personal encounters with Manuel Cardona describing his extraordinary personality. This includes descriptions of scientific discussions, Manuel Cardona's involvement in social justice and his enormous knowledge about human culture, languages and history.
Progress in Electron Properties of Solids
This volume on the novelties in the electronic properties of solids appears in occasion of Franco Bassani sixtieth birthday, and is dedicated to honour a scientific activity which has contributed so much of the development of this very active area of research. It is re markable that this book can cover so large a part of the current research on electronic properties of solids by contributions from Bassani's former students, collaborators at different stages of his scientific life, and physicists from all over the world who have been in close scientific relationship with him. A personal flavour therefore accompanies a number of the papers of this volume, which are both up-to-date reports on p...
Light Scattering in Semiconductor Structures and Superlattices
Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of se...
Silicon-Germanium Carbon Alloys
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Selected Semiconductor Research
This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a
The Physics of Opto-Electronic Materials
The papers in this volume represent most of the contributions to the Symposium on the Physics of Opto-Electronic Materials held at the General Motors Research Lab oratories in Warren, Michigan, on October 4, 5 and 6, 1970. The purpose of this Symposium was to examine the current status of knowledge related to the controlled alteration of the optical properties of solids through exter nally-applied agencies, with the aim of assessing possible future directions of scientific effort to achieve efficient, practical control of light. Since the advent of the laser, the scientific community has been motivated to explore, with a renewed vigor, methods of modulating light, and in the last decade seve...
Basic Semiconductor Physics
A detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced.
Handbook of Optical Constants of Solids, Five-Volume Set
This set of five volumes, four volumes edited by Edward D. Palik and a volume by Gorachand Ghosh, is a unique resource for any science and technology library. It provides materials researchers and optical device designers with reference facts in a context not available anywhere else. The singular functionality of the set derives from the unique format for the three core volumes that comprise the Handbook of Optical Constants of Solids. The Handbook satisfies several essential needs: first, it affords the most comprehensive database of the refractive index and extinction (or loss) coefficient of technically important and scientifically interesting dielectrics. This data has been critically se...
Handbook of Optical Constants of Solids
This handbook--a sequel to the widely used Handbook of Optical Constants of Solids--contains critical reviews and tabulated values of indexes of refraction (n) and extinction coefficients (k) for almost 50 materials that were not covered in the original handbook. For each material, the best known n and k values have been carefully tabulated, from the x-ray to millimeter-wave region of the spectrum by expert optical scientists. In addition, the handbook features thirteen introductory chapters that discuss the determination of n and k by various techniques.* Contributors have decided the best values for n and k* References in each critique allow the reader to go back to the original data to examine and understand where the values have come from* Allows the reader to determine if any data in a spectral region needs to be filled in* Gives a wide and detailed view of experimental techniques for measuring the optical constants n and k* Incorporates and describes crystal structure, space-group symmetry, unit-cell dimensions, number of optic and acoustic modes, frequencies of optic modes, the irreducible representation, band gap, plasma frequency, and static dielectric constant
Physical Properties of High Temperature Superconductors IV
This volume contains two chapters of direct interest for applications: The magnetic vortex states and transformations and the effects of c-axis coupling on the transport properties. In addition, the isotope effect is reviewed, since reliable data on ultra-pure samples are now available. The lattice vibrations (phonons) have been explored extensively by inelastic neutron scattering and infrared absorption and these types of data are reviewed as well. The interesting properties of the superconducting doped fullerenes are described; some of their most fundamental properties are shared by the superconducting cuprates. This book with its subject index, like the earlier three volumes in this series, will be found useful both by people entering the field and by workers who are already active in it.
