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Physics, Fabrication, and Applications of Multilayered Structures
Low-dimensional materials are of fundamental interest in physics and chemistry and have also found a wide variety of technological applica tions in fields ranging from microelectronics to optics. Since 1986, several seminars and summer schools devoted to low-dimensional systems have been supported by NATO. The present one, Physics, Fabrication and Applications of Multilayered structures, brought together specialists from different fields in order to review fabrication techniques, charac terization methods, physics and applications. Artificially layered materials are attractive because alternately layering two (or more) elements, by evaporation or sputtering, is a way to obtain new materials ...
Fundamental Processes of Atomic Dynamics
This volume contains the lectures presented at the NATO Advanced study Institute "Fundamental Processes of Atomic Dynamics" held in Maratea. Italy from September 20th to October 2nd 1987. The institute and this volume were conceived as a natural complement to previous institutes held in Maratea (1982) and in Santa Flavia (1984. ) whose proceedings are to be found in NATO ASI Series B vol. 103 and 134 respectively. The subject matter of these institutes was the study of the funda mental processes occurring in the interactions of atoms with photons. electrons and heavy-ions. The aim has been to unify these processes in a coherent experimen tal and theoretical approach. The present volume bring...
Buffalo City Directory
Historical papers are prefixed to several issues.
The Physics of Submicron Semiconductor Devices
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .....
Narrow-Band Phenomena—Influence of Electrons with Both Band and Localized Character
The understanding of electronic behaviour in solids when (some of) the valence electrons have both localized and band-like characteristics is one of the central problems of physics and chemistry in the second half of this century. Many advances have indeed been made using highly sophisticated techniques and concepts. Our objectives in bringing together specialists from different areas was cross-fertilization of ideas and redefinition of bottlenecks and problems. The testimony of the participants and the book which follows indicate a fair degree of success. This book is a record of discussions aimed at digestion and reassessment of some of the recent major advances in our understanding of nar...
The Sorrows of Empire
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