Welcome to our book review site go-pdf.online!
You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
Spin Physics in Semiconductors
This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.
Frontiers of Multifunctional Integrated Nanosystems
Proceedings of the NATO Advanced Research Workshop, Illmenau, Germany from 12 to 16 July 2003
Defects in Semiconductors
Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Semiconductor Processing and Characterization with Lasers, Applications in Photovoltaics
Lasers are playing an increasingly important role in various fields of semiconductor and device technology. Of special significance is their contribution to the advanced technologies that are needed for economic solutions in photovoltaics. There, lasers are used in processing and characterization of photovoltaic materials, solar cells and module technology.
Rare-Earth Doped Semiconductors II: Volume 422
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
