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Compound Semiconductor Materials and Devices
  • Language: en
  • Pages: 65

Compound Semiconductor Materials and Devices

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

III-Nitride Semiconductors and Their Modern Devices
  • Language: en
  • Pages: 661

III-Nitride Semiconductors and Their Modern Devices

All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

Layout Techniques in MOSFETs
  • Language: en
  • Pages: 69

Layout Techniques in MOSFETs

This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with D...

Resistive Random Access Memory (RRAM)
  • Language: en
  • Pages: 71

Resistive Random Access Memory (RRAM)

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programmin...

Radiation Imaging Detectors Using SOI Technology
  • Language: en
  • Pages: 59

Radiation Imaging Detectors Using SOI Technology

Silicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently. This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors. Since the SOI detector has both a thick sensing region and CMOS transistors in a monolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors.

Advanced Concepts and Architectures for Plasma-Enabled Material Processing
  • Language: en
  • Pages: 82

Advanced Concepts and Architectures for Plasma-Enabled Material Processing

Plasma-based techniques are widely and successfully used across the field of materials processing, advanced nanosynthesis, and nanofabrication. The diversity of currently available processing architectures based on or enhanced by the use of plasmas is vast, and one can easily get lost in the opportunities presented by each of these configurations. This mini-book provides a concise outline of the most important concepts and architectures in plasma-assisted processing of materials, helping the reader navigate through the fundamentals of plasma system selection and optimization. Architectures discussed in this book range from the relatively simple, user-friendly types of plasmas produced using direct current, radio-frequency, microwave, and arc systems, to more sophisticated advanced systems based on incorporating and external substrate architectures, and complex control mechanisms of configured magnetic fields and distributed plasma sources.

The Digital Revolution
  • Language: en
  • Pages: 99

The Digital Revolution

As technologists, we are constantly exploring and pushing the limits of our own disciplines, and we accept the notion that the efficiencies of new technologies are advancing at a very rapid rate. However, we rarely have time to contemplate the broader impact of these technologies as they impact and amplify adjacent technology disciplines. This book therefore focuses on the potential impact of those technologies, but it is not intended as a technical manuscript. In this book, we consider our progress and current position %toward on arbitrary popular concepts of future scenarios rather than the typical measurements of cycles per second or milliwatts. We compare our current human cultural situa...

Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
  • Language: en
  • Pages: 77

Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET

Low substrate/lattice temperature (

Non-Volatile In-Memory Computing by Spintronics
  • Language: en
  • Pages: 147

Non-Volatile In-Memory Computing by Spintronics

Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. Since the main bottleneck is from memory, we aim to develop an energy-efficient in-memory computing platform in this book. First, the models of spin-transfer torque magnetic tunnel junction and racetrack memory are presented. Next, we show that the spintronics could be a candidate for future data-oriented computing for storage, logic, and interconnect. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning. The implementations of in-memory AES, Simon cipher, as well as interconnect are explained in details. In addition, in-memory-based machine learning and face recognition are also illustrated in this book.

New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
  • Language: en
  • Pages: 72

New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation

In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (