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A comprehensive textbook on nanoelectronics covering the underlying physics, nanostructures, nanomaterials and nanodevices.
Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology. Silicon Nanoelectronics takes a look at at ...
This second of two volumes on applications in information technology is divided into two main sections. The first covers logic devices and concepts, ranging from advanced and non-conventional CMOS and semiconductor nanowire devices, via various spin-controlled logic devices and concepts involving carbon nanotubes, organic thin films, as well as single organic molecules, right up to the visionary idea of intramolecular computation. The second part, architectures and computational concepts, discusses biologically inspired structures and quantum cellular automata, finishing off by summarizing the main principles and current approaches to coherent solid-state-based quantum computation.
Theoretical and Technological Advancements in Nanotechnology and Molecular Computation: Interdisciplinary Gains compiles research in areas where nanoscience and computer science meet. This book explores current and future trends that discus areas such as, cellular nanocomputers, DNA self-assembly, and the architectural design of a "nano-brain." The authors of each chapter have provided in-depth insight into the current state of research in nanotechnology and molecular computation as well as identified successful approaches, tools and methodologies in their research.
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Final program for the CMOSET 2011 conference
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