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Si Silicon
This volume concludes the coverage of silicon carbide, SiC, begun in "Silicon" Supplement Volume B 2, 1984, subtitled "Silicon Carbide - Part I". Part I described the physical properties of SiC, SiC diodes, molecular species in the SiC-C gas phase, and amorphous silicon-carbon alloys. The current Part II ("Silicon" Supplement Volume B 3,1986) covers in its initial chapter the Si-C phase diagram and in the final chapters the higher order systems of Si and C with additional elements through boron, arranged according to the Gmelin system. In between some 95% of the volume focusses on SiC, beginning with its natural occurrence, preparation and formation, and purification, continuing with its che...
Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR d...
Aluminum Alloys
Aluminum Alloys: Structure and Properties is a reference book that provides a concise description of the practical aspects of structures and properties of aluminum alloys. The book first covers the traits of pure and commercial aluminum, which include the composition, physical and thermal properties, and radiation. Next, the text covers the various classifications of aluminum alloys, such as binary, ternary, and commercial alloys. The text will be of great use to metallurgical engineers, inorganic chemists, and other researchers and practitioners who deal with aluminum and its alloys.
Amorphous and Crystalline Silicon Carbide IV
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Solid State Physics
Solid state physics is the branch of physics that is primarily devoted to the study of matter in its solid phase, especially at the atomic level. This prestigious serial presents timely and state-of-the-art reviews pertaining to all aspects of solid state physics.
Cadmium Sulfide
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Handbook of Optical Constants of Solids, Five-Volume Set
This set of five volumes, four volumes edited by Edward D. Palik and a volume by Gorachand Ghosh, is a unique resource for any science and technology library. It provides materials researchers and optical device designers with reference facts in a context not available anywhere else. The singular functionality of the set derives from the unique format for the three core volumes that comprise the Handbook of Optical Constants of Solids. The Handbook satisfies several essential needs: first, it affords the most comprehensive database of the refractive index and extinction (or loss) coefficient of technically important and scientifically interesting dielectrics. This data has been critically se...
Amorphous and Crystalline Silicon Carbide II
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
