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Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.
Combining the two topics for the first time, this book begins with an introduction to the recent challenges in energy conversion devices from a materials preparation perspective and how they can be overcome by using atomic layer deposition (ALD). By bridging these subjects it helps ALD specialists to understand the requirements within the energy conversion field, and researchers in energy conversion to become acquainted with the opportunities offered by ALD. With its main focus on applications of ALD for photovoltaics, electrochemical energy storage, and photo- and electrochemical devices, this is important reading for materials scientists, surface chemists, electrochemists, electrotechnicians, physicists, and those working in the semiconductor industry.
Atomic layer deposition (ALD) is a thin film deposition process renowned for its ability to produce layers with unrivaled control of thickness and composition, conformability to extreme three-dimensional structures, and versatility in the materials it can produce. These range from multi-component compounds to elemental metals and structures with compositions that can be adjusted over the thickness of the film. It has expanded from a small-scale batch process to large scale production, also including continuous processing – known as spatial ALD. It has matured into an industrial technology essential for many areas of materials science and engineering from microelectronics to corrosion protection. Its attributes make it a key technology in studying new materials and structures over an enormous range of applications. This Special Issue contains six research articles and one review article that illustrate the breadth of these applications from energy storage in batteries or supercapacitors to catalysis via x-ray, UV, and visible optics.
This book will help chemists and non-chemists alike understand the fundamentals of surface chemistry and precursor design, and how these precursors drive the processes of atomic layer deposition, and how the surface-precursor interaction governs atomic layer deposition processes. The underlying principles in atomic layer deposition rely on the chemistry of a precursor with a surface.
With the increase in volume, velocity and variety of information, researchers can find it difficult to keep up to date with the literature in their field. Providing an invaluable resource, this volume contains analysed, evaluated and distilled information on the latest in organometallic chemistry research and emerging fields. The reviews range in scope and include π-coordinated arene metal complexes and catalysis by arene exchange, rylenes as chromophores in catalysts for CO2 photoreduction, metal nodes and metal sites in metal–organic frameworks, developments in molecular precursors for CVD and ALD, and multiphoton luminescence processes in f-element containing compounds.
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensio...