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Modern Semiconductor Devices for Integrated Circuits
  • Language: en
  • Pages: 387

Modern Semiconductor Devices for Integrated Circuits

Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "

Modern Semiconductor Devices For Integrated Circuits
  • Language: en

Modern Semiconductor Devices For Integrated Circuits

  • Type: Book
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  • Published: Unknown
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  • Publisher: Unknown

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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design
  • Language: en
  • Pages: 258

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors incl...

BSIM4 and MOSFET Modeling for IC Simulation
  • Language: en
  • Pages: 435

BSIM4 and MOSFET Modeling for IC Simulation

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

MOSFET Modeling & BSIM3 User’s Guide
  • Language: en
  • Pages: 467

MOSFET Modeling & BSIM3 User’s Guide

Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are importan...

Solar Cells
  • Language: en
  • Pages: 312

Solar Cells

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FinFET Modeling for IC Simulation and Design
  • Language: en
  • Pages: 305

FinFET Modeling for IC Simulation and Design

This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG

Compact Modeling
  • Language: en
  • Pages: 531

Compact Modeling

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

FinFETs and Other Multi-Gate Transistors
  • Language: en
  • Pages: 350

FinFETs and Other Multi-Gate Transistors

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Low Power Design Methodologies
  • Language: en
  • Pages: 373

Low Power Design Methodologies

Low Power Design Methodologies presents the first in-depth coverage of all the layers of the design hierarchy, ranging from the technology, circuit, logic and architectural levels, up to the system layer. The book gives insight into the mechanisms of power dissipation in digital circuits and presents state of the art approaches to power reduction. Finally, it introduces a global view of low power design methodologies and how these are being captured in the latest design automation environments. The individual chapters are written by the leading researchers in the area, drawn from both industry and academia. Extensive references are included at the end of each chapter. Audience: A broad introduction for anyone interested in low power design. Can also be used as a text book for an advanced graduate class. A starting point for any aspiring researcher.