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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
This book deals with topics such as single molecular electronics and photonics, NICE devices, smart soft materials, interfacial dynamic technology, and fabrication and characterization technology.
Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.
This book covers the complete spectrum of nonlinear optics and all solid state lasers.The book integrates theory, calculations and practical design, technology, experimental schemes and applications. With the expansion and further development of Laser technology, the wavelength spectrum of Lasers had to be enlarged, even to be tunable which requires the use of nonlinear optical and Laser tunable technology. It systematically summarizes and integrates the analysis of international achievements within the last 20 years in this field. It will be helpful for university teachers, graduate students as well as engineers.
The book gives an in-depth description of the key devices of current and next generation fibre optic communication networks. In particular, the book covers devices such as semiconductor lasers, optical amplifiers, modulators, wavelength filters, and detectors but the relevant properties of optical fibres as well. The presentations include the physical principles underlying the various devices, the technologies used for the realization of the different devices, typical performance characteristics and limitations, and development trends towards more advanced components are also illustrated. Thus the scope of the book spans relevant principles, state-of-the-art implementations, the status of current research and expected future components.
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
The Second Edition of the bestselling Measurement, Instrumentation, and Sensors Handbook brings together all aspects of the design and implementation of measurement, instrumentation, and sensors. Reflecting the current state of the art, it describes the use of instruments and techniques for performing practical measurements in engineering, physics, chemistry, and the life sciences and discusses processing systems, automatic data acquisition, reduction and analysis, operation characteristics, accuracy, errors, calibrations, and the incorporation of standards for control purposes. Organized according to measurement problem, the Electromagnetic, Optical, Radiation, Chemical, and Biomedical Meas...
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.