Welcome to our book review site go-pdf.online!

You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.

Sign up

Physics and Technology of High-k Gate Dielectrics 5
  • Language: en
  • Pages: 676

Physics and Technology of High-k Gate Dielectrics 5

This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Defects in SiO2 and Related Dielectrics: Science and Technology
  • Language: en
  • Pages: 619

Defects in SiO2 and Related Dielectrics: Science and Technology

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996
  • Language: en
  • Pages: 804

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996

  • Type: Book
  • -
  • Published: 1996
  • -
  • Publisher: Unknown

None

Semiconductor Material and Device Characterization
  • Language: en
  • Pages: 800

Semiconductor Material and Device Characterization

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterizat...

Semiconductor Wafer Bonding VII : Science, Technology, and Applications
  • Language: en
  • Pages: 408
Handbook of Surfaces and Interfaces of Materials, Five-Volume Set
  • Language: en
  • Pages: 1915

Handbook of Surfaces and Interfaces of Materials, Five-Volume Set

  • Type: Book
  • -
  • Published: 2001-10-26
  • -
  • Publisher: Elsevier

This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineeri...

Defects in HIgh-k Gate Dielectric Stacks
  • Language: en
  • Pages: 508

Defects in HIgh-k Gate Dielectric Stacks

The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrica...

High Dielectric Constant Materials
  • Language: en
  • Pages: 740

High Dielectric Constant Materials

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Silicon Devices and Process Integration
  • Language: en
  • Pages: 614

Silicon Devices and Process Integration

Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-th...