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Ultrashort laser pulses with durations in the femtosecond range up to a few picoseconds provide a unique method for precise materials processing or medical applications. Paired with the recent developments in ultrashort pulse lasers, this technology is finding its way into various application fields. The book gives a comprehensive overview of the principles and applications of ultrashort pulse lasers, especially applied to medicine and production technology. Recent advances in laser technology are discussed in detail. This covers the development of reliable and cheap low power laser sources as well as high average power ultrashort pulse lasers for large scale manufacturing. The fundamentals of laser-matter-interaction as well as processing strategies and the required system technology are discussed for these laser sources with respect to precise materials processing. Finally, different applications within medicine, measurement technology or materials processing are highlighted.
This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for insulators and semiconductors. Finally some selected applications of ion beams are given.
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This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
John Valentine Kratz (1707-1780) emigrated from Germany to America on the ship "Friendship" in 1727, settling in Salford Township, Philadel phia (now Montgomery) County, Pennsylvania. He was married to Ann Clemens, by whom he had nine children. Many descendants of this large Mennonite family remained in Pennsylvania, while others migrated to Canada or moved into many other of the United States.
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