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Interfaces and Plasticity
Dislocations were introduced into crystal physics, and particularly into the theory of plasticity, in 1934. For many years, they were the field of speculation of a small group of specialists, not considered seriously by real physicists and metallurgists. After W.T. Read Jr's fundamental work in 1953 and further developments by Cottrel, Friedel, Frank and Hirsch, dislocations had become part of the working vocabulary of solid-state physics and metallurgy.
Superalloys 2020
The 14th International Symposium on Superalloys (Superalloys 2020) highlights technologies for lifecycle improvement of superalloys. In addition to the traditional focus areas of alloy development, processing, mechanical behavior, coatings, and environmental effects, this volume includes contributions from academia, supply chain, and product-user members of the superalloy community that highlight technologies that contribute to improving manufacturability, affordability, life prediction, and performance of superalloys.
Stability of Materials
Engineering materials with desirable physical and technological properties requires understanding and predictive capability of materials behavior under varying external conditions, such as temperature and pressure. This immediately brings one face to face with the fundamental difficulty of establishing a connection between materials behavior at a microscopic level, where understanding is to be sought, and macroscopic behavior which needs to be predicted. Bridging the corresponding gap in length scales that separates the ends of this spectrum has been a goal intensely pursued by theoretical physicists, experimentalists, and metallurgists alike. Traditionally, the search for methods to bridge ...
Euro Superalloys 2010
Selected, peer reviewed papers from the European Symposium on Superalloys and their Applications, 25-28 May, 2010, Wildbach Kreuth (Germany)
Materials World
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TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings
This collection presents papers from the 150th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society.
Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815
Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.
