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The molecular mechanisms underlying the fact that a crystal can take a variety of external forms is something we have come to understand only in the last few decades. This is due to recent developments in theoretical and experimental investigations of crystal growth mechanisms. Morphology of Crystals is divided into three separately available volumes. Part A contains chapters on roughening transition; equilibrium form; step pattern theory; modern PBC; and surface microtopography. This part provides essentially theoretical treatments of the problem, particularly the solid-liquid interface. Part B contains chapters on ultra-fine particles; minerals; transition from polyhedral to dendrite; theo...
This volume contains the papers presented at the NATO Advanced Research Workshop on "Kinetics of Ordering and Growth at Surfaces", held in Acquafredda di Maratea, Italy, September 18-22, 1989. The workshop's goal was to bring together theorists and experimentalists from two related fields, surface science and thin-film growth, to highlight their common interests and overcome a lack of communication between these two communities. Typically surface scientists are only concerned with the microscopic (atomic) description of solids within one monolayer of the surface. Thin-film growers are usually considered more empirical in their approach, concerned primarily with the "quality of their product"...
The surface of solids had long been considered simply the external boundary which determined the outside appearance of the solids but had no intrinsic character of its own. The concept that surfaces have specific properties and are the first and foremost means of communication between individual things and the rest of the universe is fairly new, coming into prominence only in the early sixties. This new concept of surface properties was the result of a vast accumulation of knowledge due to recent development of research in this area. This breakthrough of surface science resulted from the combined action of four factors: (i) control of surface sample prep aration, (ii) control of the surface'...
This is the second volume in a new series, which aims to publish authoritative review articles on a wide range of exciting and contemporary topics in gas and condensed phase kinetics. Research in Chemical Kinetics complements the acclaimed series Comprehensive Chemical Kinetics, and is edited by the same team of professionals. The reviews contained in this volume are concise, topical accounts of specific research written by acknowledged experts. The authors summarize their latest work and place it in a general context. Particular strengths of the volume are the quality of the contributions and their topicality, and the rapid publication realized.
In the seven years since this volume first appeared. there has been an enormous expansion of the range of problems to which Monte Carlo computer simulation methods have been applied. This fact has already led to the addition of a companion volume ("Applications of the Monte Carlo Method in Statistical Physics", Topics in Current Physics. Vol . 36), edited in 1984, to this book. But the field continues to develop further; rapid progress is being made with respect to the implementation of Monte Carlo algorithms, the construction of special-purpose computers dedicated to exe cute Monte Carlo programs, and new methods to analyze the "data" generated by these programs. Brief descriptions of these...
The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.
Proceedings of the 3rd European Conference on Crystal Growth, Budapest, Hungary, May 1991
A comprehensive overview of the key techniques used in the fabrication of micron-scale structures in silicon; for graduate students and researchers.
Volume I - Fundamentals addresses the underlying scientific principles relevant to all the techniques of crystal growth. Following a Foreword by Professor Sir Charles Frank and an historical introduction, the first part contains eight chapters devoted to thermodynamic, kinetic and crystallographic aspects including computer simulation by molecular dynamics and Monte Carlo methods. The second part, comprising a further seven chapters, is devoted to bulk transport effects and the influence of transport-limited growth on the stability of both isolated growth forms (such as the dendrite) and arrays, and on the cooperative effects which lead to pattern formation. All the presentations are superbly authoritative.