Welcome to our book review site go-pdf.online!
You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
SiC Materials and Devices
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Sic Materials And Devices - Volume 1
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
The chronic challenge - new vistas on long-term multisite contacts to the central nervous system
Have you ever heard of a Hype-Cycle? It is a description that was put forward by an IT consultancy firm to describe certain phenomena that happen within the life cycle of new technology products. As Fenn and Raskino stated in their book (Fenn and Raskino 2008), a novel technology - a “Technology Trigger” - gives rise to a steep increase in interest, leading to the “Peak of Inflated Expectations”. Following an accumulation of more detailed knowledge on the technology and its short-comings, the stake holders may need to traverse a “Trough of Disillusionment”, which is followed by a shallower “Slope of Enlightenment”, before finally reaching the “Plateau of Productivity”. In...
Advanced Silicon Carbide Devices and Processing
Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.
Graphene
As a direct development of nanotechnologies, graphene is the first known crystal that has genuine two-dimensional structure (2D). The diversity of properties of graphene has predetermined a wide range of applications of its use in many areas of scientific and practical activities. The collection Graphene consists of papers published by Trans Tech Publications Inc. from 2010 up to 2015 and covers the technology of graphene formation, as well as the application of this unique material to a wide range of technological developments. The papers are presented in nine chapters: Chapter 1: Technologies of Graphene Formation; Chapter 2: Research and Analysis Properties and Quality of Graphene; Chapter 3: Composites and Polymers Based on Graphene; Chapter 4: Research and Development of Films, Fibers, Surface and Coating with Use of Graphene; Chapter 5: Application of Graphene in Photocatalytic Processes and Environmental Engineering; Chapter 6: Graphene in Biomedical Engineering; Chapter 7: Using Graphene in Electronics and Photovoltaics; Chapter 8: Application of Graphene for Sensors and NEMS; Chapter 9: Using of Graphene in Energy Storage, Fuel Cells and Supercapacitors.
Silicon Carbide and Related Materials 2004
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and...
Silicon Carbide and Related Materials 2006
Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.
Wide-Bandgap Electronic Devices: Volume 622
Interest in wide-bandgap semiconductors for high-power/high-temperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve n-type doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, high-breakdown voltages, and well-developed substrates and processing techniques. This book deals with a wide range of technical activity in the area of wide-bandgap high-power/high-temperature electronic devices and covers topics including the fabrication and performance of GaN-based and SiC-based devices, as well as issues related to growth, characterization, and processing of wide-bandgap materials. Several summaries of the current status of the field are provided.
