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Properties of Advanced Semiconductor Materials
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
Best Of Soviet Semiconductor Physics And Technology (1989-1990)
Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published. However, due to the lack of exchange and personal contact, most of these, unfortunately, are neglected by many scientists from the United States, Japan as well as Western Europe. Consequently, many important developments in semiconductor physics are missed by the Western world.This book is a serious attempt to bridge the gap between the Soviet and Western scientific communities. Most of all, it is an effort towards facilitating the communication and sharing of knowledge amongst people from different parts of the world. Ultimately, the aim is to contribute towards the building of a better world for all — one where the knowledge of advanced technology and scientific discoveries is used to improve the quality of life and not the pursuit of selfish mutually destructive behavior. For those in the field who wish to partake in this exchange of knowledge and as a gesture of support for their Soviet counterparts, the reading of this book provides the first step.
Handbook Series On Semiconductor Parameters, Vol. 1: Si, Ge, C (Diamond), Gaas, Gap, Gasb, Inas, Inp, Insb
The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.
Getting To Know Semiconductors
Getting to Know Semiconductors is a simple introductory text on semiconductors. First published in Russian, 150, 000 copies of the first edition were sold out immediately. This translated English version by two of Russia's foremost scientists in the field of semiconductors is now available.Clearly written in a simple and lively manner, this book presents the most important phenomena of semiconductor physics and devices.
The Spirit of Russian Science
"The Spirit of Russian Science" comprises dozens of short and funny true stories about the relations between people working in science, the ways people of science interacted, and their attitudes towards life. On the one hand, these stories are very Russian. On the other hand, the spirit of science displayed is very international. One cannot help feeling it, and it is something that is very difficult to define. This book shows the way this spirit manifests itself, providing amusing examples. Contents: Seminars; Seminars Which Did Not Take Place; Orders; Winter Schools; Foreigners at the IOFFE Institute; Russians Abroad; Little Secrets of Theoreticians; Short Sketches on Social Life. Readership: Scientists and general readers.
Breakdown Phenomena In Semiconductors And Semiconductor Devices
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
GaN-based Materials and Devices
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Transistors: From Crystals To Integrated Circuits
This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices — the transistors.The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well.The book consists of 3 parts:Part I: The section on semiconductors describes the main properties of semiconductors, explains the difference between the semiconductors, metals and dielectrics. We find here the explanation of the appearance of those wonderfu...
Frontiers In Electronics: Future Chips, Proceedings Of The 2002 Workshop On Frontiers In Electronics (Wofe-02)
The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.
Sic Materials And Devices - Volume 1
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
