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Some New Directions in Science on Computers
Computers are used in today's technological world as a powerful tool to simulate many complex phenomena in various fields. This book is an introduction to some of these exciting developments. All the articles are written by experts in their respective fields. Each article teaches by example and the book contains case studies in fields as diverse as physics, biology, fluid dynamics, astrophysics, device modeling and weather simulation. This book should be of interest to a new researcher as an introduction to an exciting arena of computer applications. It should also benefit expert scientists, providing methods that may apply to their own problems or open up new research possibilities with unlimited promise.
Defects in HIgh-k Gate Dielectric Stacks
The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrica...
SiGe and Ge
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
High Dielectric Constant Materials
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Computational Electronics
Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from var...
Monte Carlo Device Simulation
Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo devi...
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electroc...
The Physics and Technology of Amorphous SiO2
The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic...
Carrier Transport in Nanoscale MOS Transistors
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
