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Atomic Layer Deposition Applications 4
The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. This issue of the ECS Transactions contains peer reviewed papers presented at the symposium. Breadths of ALD Applications are featured: novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics and a variety of other emerging applications.
Physics of Semiconductor Devices
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Silicene
This book reviews the current state-of-the art of single layer silicene up to thicker silicon nanosheets, and their structure, properties and potential applications. Silicene is a newly discovered material that is one atomic layer think. It is a two-dimensional (2D) nanomaterial that is classified as a nanosheet, which has large lateral dimensions up to micrometres, but thicknesses of only nanometres or less. Silicon nanosheets are currently a very ‘hot’ area of research. The unique properties and morphology of such materials make them ideal for a variety of applications, including electronic devices, batteries and sensors. 2D nanosheets of silicon can be considered as analogues of graphene. As silicon is already the major component of electronic devices, the significance of nanosheets composed of silicon is that they can be more easily integrated into existing electronic devices. Furthermore, if 2D nanostructured Si can be implemented into such devices, then their size could be reduced into the nano-regime, providing unique properties different from bulk Si that is currently employed. The book is written for researchers and graduate students.
High k Gate Dielectrics
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Bias Temperature Instability for Devices and Circuits
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
High Permittivity Gate Dielectric Materials
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Physics and Technology of High-k Gate Dielectrics 5
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Fundamentals of Low Dimensional Magnets
A low-dimensional magnet is a key to the next generation of electronic devices. In some respects, low-dimensional magnets refer to nanomagnets (nanostructured magnets) or single-molecule magnets (molecular nanomagnets). They also include the group of magnetic nanoparticles, which have been widely used in biomedicine, technology, industries, and environmental remediation. Low-dimensional magnetic materials can be used effectively in the future in powerful computers (hard drives, magnetic random-access memory, ultra-low power consumption switches, etc.). The properties of these materials largely depend on the doping level, phase, defects, and morphology. This book covers various nanomagnets an...
