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Semiconductors, Dielectrics, and Metals for Nanoelectronics 16
  • Language: en
  • Pages: 93
Allied Occupation of Japan
  • Language: en
  • Pages: 802

Allied Occupation of Japan

  • Type: Book
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  • Published: 2003-01-01
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  • Publisher: A&C Black

Published to coincide with the 50th anniversary of the end of the American-led Allied Occupation of Japan (1945-52), The Allied Occupation of Japan is a sweeping history of the revolutionary reforms that transformed Japan and the remarkable men and women, American and Japanese, who implemented them.

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics
  • Language: en
  • Pages: 303

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

  • Type: Book
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  • Published: 2021-12-10
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  • Publisher: CRC Press

This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in ...

Data Protection and Social Science Research
  • Language: en
  • Pages: 236

Data Protection and Social Science Research

None

Permanent Appointments and Rank Status of Officers of the United States Naval Reserve
  • Language: en
  • Pages: 510
Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors
  • Language: en
  • Pages: 216

Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

Log Home Design
  • Language: en
  • Pages: 176

Log Home Design

  • Type: Magazine
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  • Published: 2002-07
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  • Publisher: Unknown

Log Home Design is the preferred, trusted partner with readers in simplifying the process of becoming a log home owner. With its exclusive focus on planning and design, the magazine's friendly tone, practical content and targeted advertising provide the essential tools consumers need – from the crucial preliminary stages through the finishing touches of their dream log home.

Official Congressional Directory
  • Language: en
  • Pages: 1164

Official Congressional Directory

  • Type: Book
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  • Published: 1977
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  • Publisher: Unknown

None

Official Army Register
  • Language: en
  • Pages: 1212

Official Army Register

  • Type: Book
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  • Published: 1918
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  • Publisher: Unknown

None