Welcome to our book review site go-pdf.online!
You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
Polarons and Excitons in Polar Semiconductors and Ionic Crystals
The 1982 Antwerp Advanced Study Institute on "Physics of Polarons and Excitons in Polar Semiconductors and Ionic Crystals" took place from July 26 till August 5 at the Conference Center Priorij Corsen donk, a restored monastery, close to the city of Antwerp. It was the seventh Institute in our series which started in 1971. This Advanced Study Institute, which was held fifty years after Landau introduced the polaron concept, can be considered as the third major international symposium devoted to the physics of pola rons. The first such symposium took place in St. Andrews in 1962 under the title "Polarons and Excitons" [I]. The early theoretical developments related to polarons were reviewed i...
December 16
No detailed description available for "December 16".
Globalization and the Transformation of Foreign Economic Policy
The onslaught of globalization has brought with it sweeping changes to the foreign economic policy of the last 50 years. As the international political economy of nations and regions continues to be drawn and redrawn, this book traces the goals and instruments of foreign economic policy during this period, providing insight into the long-run trends and developing new theoretical generalizations. The book charts the journey from the point when foreign economic policy was solely concerned with foreign trade - pursued to promote the interests of individual countries - to the current globalization of the world economy that creates a uniform market in goods, services and factors of production that embrace all countries and regions.
Semiconductor Research
The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.
Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials
In recent interactions with industrial companies it became quite obvious, that the search for new materials with strong anisotropic properties are of paramount importance for the development of new advanced electronic and magnetic devices. The questions concerning the tailoring of materials with large anisotropic electrical and thermal conductivity were asked over and over again. It became also quite clear that the chance to answer these questions and to find new materials which have these desired properties would demand close collaborations between scientists from different fields. Modem techniques ofcontrolled materials synthesis and advances in measurement and modeling have made clear tha...
Spontaneous Ordering in Semiconductor Alloys
The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technol...
Properties of Aluminium Gallium Arsenide
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
The Impact of International Economic Disturbances on the Soviet Union and Eastern Europe
The Impact of International Economic Disturbances on the Soviet Union and Eastern Europe: Transmission and Response focuses on the transmission of economic disturbances to the Soviet Union and Eastern Europe, as well as the policy responses of both to such disturbances. Topics covered include external inflation, balance of trade, and resource allocation, along with the impact of the world economic crisis on intra-CMEA trade. This book is comprised of 16 chapters and begins with an overview of major international economic disturbances during the first half of the 1970s and their transmission to the Soviet Union and Eastern European countries. The following chapters examine the adjustment made...
Intersubband Transitions in Quantum Wells
This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the car...
