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This book explains different magnetic resonance (MR) techniques and uses different combinations of these techniques to analyze defects in semiconductors and nanostructures. It also introduces novelties such as single defects MR and electron-paramagnetic-resonance-based methods: electron spin echo, electrically detected magnetic resonance, optically detected magnetic resonance and electron-nuclear double resonance – the designated tools for investigating the structural and spin properties of condensed systems, living matter, nanostructures and nanobiotechnology objects. Further, the authors address problems existing in semiconductor and nanotechnology sciences that can be resolved using MR, and discuss past, current and future applications of MR, with a focus on advances in MR methods. The book is intended for researchers in MR studies of semiconductors and nanostructures wanting a comprehensive review of what has been done in their own and related fields of study, as well as future perspectives.
This book shows how the fundamentals of electron paramagnetic resonance (EPR) spectroscopy are practically implemented and illustrates the diversity of current applications. The technique is used at various levels, and applications are presented in order of increasing difficulty, with reference to theoretically obtained results. This book features a diverse array of application examples, from fields such as ionizing radiation dosimetry, neurodegenerative diseases, structural transitions in proteins, and the origins of terrestrial life. The final chapter of this book highlights the principles and applications of the technique of ferromagnetic resonance spectroscopy, followed by a brief introduction to advanced EPR techniques such as electron spin echo envelope modulation (ESEEM), hyperfine sub-level correlation (HYSCORE), pulsed electron-electron double resonance (PELDOR), and continuous wave electron nuclear double resonance (ENDOR) experiments.
The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrica...
Das Ortsregister der DBE listet in alphabetischer Reihenfolge die in den Artikeln der Bände 1 bis 10 erwähnten Orte auf. Die Fundstellen werden in folgender Form angegeben: Stichwort, Hinweis auf Geburtsort (*), Wirkungsort (~) bzw. Sterbeort (†), Band/Seitenzahl. Orte gleichen Namens werden durch Zusätze wie die Kreiszugehörigkeit gekennzeichnet. Bei Orten in ehemals deutschen oder österreichischen Gebieten wird der Name in der jetzigen Landessprache hinzugefügt.
Die Debatte um den Beitritt Rumäniens zur Europäischen Union wird häufig unter dem Aspekt der Anschlussfähigkeit geführt. Die Beiträge dieses Bandes versetzen diese Frage in das kulturwissenschaftliche Spannungsfeld zwischen Grenzziehung und Grenzüberschreitung. Grenzen bilden kulturelle Räume, moderne Staaten, wirtschaftliche und juristische Systeme aus, die die Verhaltensweisen ihrer Bürger prägen. Doch führen Grenzziehungen auch zu Ab und Ausgrenzungen. In der Figur der Transversale geht es deshalb um Formen der zeitweiligen Überlagerung und Überschneidung von Kulturen, Interdependenzen, die es Kulturen ermöglichen, ihre Lage zueinander besser in den Blick zu bekommen. In diesem Sinne nimmt sich der Band vor, die rumänische Sprache, Literatur und Kultur im Zeichen ihrer Überkreuzungen und Nachbarschaften zu lesen und das innovative Potenzial dieser Begegnung zu erkunden.