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Semiconductor Materials
The technological progress is closely related to the developments of various materials and tools made of those materials. Even the different ages have been defined in relation to the materials used. Some of the major attributes of the present-day age (i.e., the electronic materials’ age) are such common tools as computers and fiber-optic telecommunication systems, in which semiconductor materials provide vital components for various mic- electronic and optoelectronic devices in applications such as computing, memory storage, and communication. The field of semiconductors encompasses a variety of disciplines. This book is not intended to provide a comprehensive description of a wide range o...
Physics and Properties of Narrow Gap Semiconductors
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Semiconductor Alloys
In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
Physics of High-Speed Transistors
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibili...
Field Emission in Vacuum Microelectronics
Field emission is a phenomenon described by quantum mechanics. Its emission capability is millions times higher than that of any other known types of electron emission. Nowadays this phenomenon is experiencing a new life due to wonderful applications in the atomic resolution microscopy, in electronic holography, and in the vacuum micro- and nanoelectronics in general. The main field emission properties, and some most remarkable experimental facts and applications, are described in this book.
Semiconductor Device Physics and Simulation
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional t...
Compound and Josephson High-Speed Devices
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initial...
Electron Beam Testing Technology
Although exploratory and developmental activity in electron beam testing (EBT) 25 years, it was not had already been in existence in research laboratories for over until the beginning of the 1980s that it was taken up seriously as a technique for integrated circuit (IC) testing. While ICs were being fabricated on design rules of several microns, the mechanical ne edle probe served quite adequately for internal chip probing. This scenario changed with growing device complexity and shrinking geometries, prompting IC manufacturers to take note ofthis new testing technology. It required several more years and considerable investment by electron beam tester manufacturers, however, to co me up with user-friendly automated systems that were acceptable to IC test engineers. These intervening years witnessed intense activity in the development of instrumentation, testing techniques, and system automation, as evidenced by the proliferation of technical papers presented at conferences. With the shift of interest toward applications, the technology may now be considered as having come of age.
Modern Developments in Vacuum Electron Sources
This book gives an overview of modern cathodes and electron emitters for vacuum tubes and vacuum electron devices in general. It covers the latest developments in field emission theory as well as new methods towards improving thermionic and cold cathodes. It addresses thermionic cathodes, such as oxide cathodes, impregnated and scandate cathodes, as well as photocathodes and field emitters – the latter comprising carbon nanotubes, graphene and Spindt-type emitter arrays. Despite the rise and fall of the once dominant types of vacuum tubes, such as radio valves and cathode ray tubes, cathodes are continually being improved upon as new applications with increased demands arise, for example in electron beam lithography, high-power and high-frequency microwave tubes, terahertz imaging and electron sources for accelerators. Written by 17 experts in the field, the book presents the latest developments in cathodes needed for these applications, discussing the state of the art and addressing future trends.
