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Although exploratory and developmental activity in electron beam testing (EBT) 25 years, it was not had already been in existence in research laboratories for over until the beginning of the 1980s that it was taken up seriously as a technique for integrated circuit (IC) testing. While ICs were being fabricated on design rules of several microns, the mechanical ne edle probe served quite adequately for internal chip probing. This scenario changed with growing device complexity and shrinking geometries, prompting IC manufacturers to take note ofthis new testing technology. It required several more years and considerable investment by electron beam tester manufacturers, however, to co me up with user-friendly automated systems that were acceptable to IC test engineers. These intervening years witnessed intense activity in the development of instrumentation, testing techniques, and system automation, as evidenced by the proliferation of technical papers presented at conferences. With the shift of interest toward applications, the technology may now be considered as having come of age.
This volume comprises the select peer-reviewed proceedings of the International Conference on Nanotechnology: Opportunities and Challenges (ICNOC22). It aims to provide a comprehensive and broad-spectrum picture of the state-of-the-art research and development in nanomaterials, nanocomposites, nanobiosensors, nanochemistry, renewable energy, nanochemistry in medicine, batteries and supercapacitors, targeted cellular therapies, among others. This volume will be useful for researchers and professionals working in nanotechnology and allied fields.
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initial...
As the semiconductor industry attempts to increase the number of functions that will fit into the smallest space on a chip, it becomes increasingly important for new technologies to keep apace with these demands. Photomask technology is one of the key areas to achieving this goal. Although brief overviews of photomask technology exist in the literature, the Handbook of Photomask Manufacturing Technology is the first in-depth, comprehensive treatment of existing and emerging photomask technologies available. The Handbook of Photomask Manufacturing Technology features contributions from 40 internationally prominent authors from industry, academia, government, national labs, and consortia. Thes...
Includes bibliographical references and index.
In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
Field emission is a phenomenon described by quantum mechanics. Its emission capability is millions times higher than that of any other known types of electron emission. Nowadays this phenomenon is experiencing a new life due to wonderful applications in the atomic resolution microscopy, in electronic holography, and in the vacuum micro- and nanoelectronics in general. The main field emission properties, and some most remarkable experimental facts and applications, are described in this book.
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional t...
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.