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How to Achieve Efficiencies Exceeding 22% with Multicrystalline N-type Silicon Solar Cells
Abstract: In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact. By applying a "high-performance" (HP) crystallization process with an adapted seed structure in order to obtain an optimized grain boundary area fraction, we reduce recombination losses in the HP mc-Si material to a minimum. We discuss the electrical properties of the optimized n-type HP mc-Si, which features very low material-related efficiency losses of approximately 0.5%abs and, thus, enables an efficiency potential of 22.6% with regard to a cell limit of 23.1% of the TOPCon cell concept adapted for multicrystalline silicon. Results at the device level reveal a record efficiency of 21.9%, which is the highest efficiency reported for a multicrystalline silicon solar cell. Finally, we discuss the deviations between the predicted efficiency potential and the solar cell results
Silicon Solar Cell-integrated Stress and Temperature Sensors for Photovoltaic Modules
Abstract: We propose silicon solar cell-integrated stress and temperature sensors as a new approach for the stress and temperature measurement in photovoltaic (PV) modules. The solar cell-integrated sensors enable a direct and continuous in situ measurement of mechanical stress and temperature of solar cells within PV modules. In this work, we present a proof of concept for stress and temperature sensors on a silicon solar cell wafer. Both sensors were tested in a conventional PV module setup. For the stress sensor, a sensitivity of (−47.41 ± 0.14)%/GPa has been reached, and for the temperature sensor, a sensitivity of (3.557 ± 0.008) × 10−3 K−1 has been reached. These sensors can already be used in research for increased measurement accuracy of the temperature and the mechanical stress in PV modules because of the implementation at the precise location of the solar cells within a laminate stack, for process evaluation, in-situ measurements in reliability tests, and the correlation with real exposure to climates
Two-terminal III-V//Si Triple-junction Solar Cell with Power Conversion Efficiency of 35.9 % at AM1.5g
Abstract: III-V//Si multijunction solar cells offer a pathway to increase the power conversion efficiency beyond the fundamental Auger limit of silicon single-junctions. In this work, we demonstrate how the efficiency of a two-terminal wafer-bonded III-V//Si triple-junction solar cell is increased from 34.1 % to 35.9 % under an AM1.5g spectrum, by optimising the III-V top structure. This is the highest reported efficiency to date for silicon-based multijunction solar cell technologies. This improvement was accomplished by two main factors. First, the integration of a GaInAsP absorber in the middle cell increased the open-circuit voltage by 51 mV. Second, a better current matching of all subc...
Two-terminal Direct Wafer-bonded GaInP/AlGaAs//Si Triple-junction Solar Cell with AM1.5g Efficiency of 34.1%
Abstract: The terrestrial photovoltaic market is dominated by single-junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer-bonded triple-junction two-terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected
