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Nanoelectronic Materials and Devices
This book gathers a collection of papers by international experts that were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including relevant nano/micro materials and devices. Highlighting the latest research on nanoelectronic materials and devices, the book offers a valuable guide for researchers, practitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energy application, sensing and high strength materials and simulation of novel device design structures for ultra-low power applications.
Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures
This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.
Optimisation of ZnO Thin Films
This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films. The results will prove useful in the field of optoelectronics in the UV region. This book will prove useful to research scholars and professionals working on doping and implantation of ZnO thin films and subsequently fabricating optoelectronic devices. The first chapter of the monograph emphasises the importance of ZnO in the field of optoelectronics for ultraviolet (UV) region and also discusses the material, electronic and optical properties of ZnO. The book then goes on to discuss the optimization of pulsed laser deposited (PLD) ZnO thin films in order to make successful p-type films. This can enable achievement of high optical output required for high-efficiency devices. The book also discusses a hydrogen implantation study on the optimized films to confirm whether the implantation leads to improvement in the optimized results.
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While r...
Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its e...
BASIC ELECTRONIC DEVICES AND CIRCUITS
This book provides detailed fundamental treatment of the underlying physics and operational characteristics of most commonly used semi-conductor devices, covering diodes and bipolar transistors, opto-electronic devices, junction field-effect transistors, and MOS transistors. In addition, basic circuits utilising diodes, bipolar transistors, and field-effect transistors are described, and examples are presented which give a good idea of typical performance parameters and the associated waveforms. A brief history of semiconductor devices is included so that the student develops an appreciation of the major technological strides that have made today’s IC technology possible. Important concept...
Laser Focus World
"Global electro-optic technology and markets." "Photonics technologies & solutions for technical professionals worldwide."
Frontiers in Electronic Technologies
This book is a collection of keynote lectures from international experts presented at International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompasses six symposia covering all aspects of electronics and communications domains, including relevant nano/micro materials and devices . This volume comprises of recent research in areas like computational signal processing analysis, intelligent embedded systems, nanoelectronic materials and devices, optical and microwave technologies, VLSI design: circuits systems and application, and wireless communication networks, and the internet of things. The contents of this book will be useful to researchers, professionals, and students working in the core areas of electronics and their applications, especially to signal processing, embedded systems, and networking.
Intersubband Transitions In Quantum Structures
Investigates and outlines the experimental technique of intersubband transitions as a solution. Covers topics such as: intersubband emission in silicon-based quantum structure, quantum dot infrared photodetectors, antimonide, quantum cascade lasers for the 3-5m atmospheric window and more.
