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Ion Beam Analysis
Nuclear Instruments and Methods, Volume 168: Ion Beam Analysis presents the proceedings of the Fourth International Conference on Ion Beam Analysis, held in Aarhus, Denmark, on June 25–29, 1979. This book provides information pertinent to the methods and applications ion beam analysis. Organized into eight parts encompassing 95 chapters, this volume begins with an overview of the straggling of energy loss for protons and alpha particles. This text then examines the method for the calculation of the stopping of energetic ions in matter. Other chapters consider the method for measuring relative stopping powers for light energetic ions in highly reactive materials. This book discusses as well the stopping power and straggling of lithium ions with velocities around the Bohr velocity. The final chapter deals with the adsorption behavior of different gases on monocrystalline platinum surfaces. This book is a valuable resource for scientists, technologists, students, and research workers.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Thin Film and Depth Profile Analysis
The characterization of thin films and solid interfaces as well as the determina tion of concentration profiles in thin solid layers is one of the fields which re quire a rapid transfer of the results from basic research to technological applica tions and developments. It is the merit of the Dr. Wilhelm Heinrich and Else Heraeus-Stiftung to promote such a transfer by organizing high standard seminars mostly held at the "Physikzentrum" in Bad Honnef near Bonn. The present book has been stimulated by one of these seminars assembling most of the invited speakers as co-authors. The editor appreciates the cooperation of his colleagues contributing to this book. H. Oechsner Kaiserslautern, April 1...
