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Analysis and Simulation of Heterostructure Devices
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
From Technische Hochschule to research university
This volume takes a look at the past – at the last 50 years in particular – and a look at the present, painting a picture of how the Imperial Royal Polytechnic Institute, founded in 1815, became the Technische Universität Wien – the "TU Wien" – with the launch of the 1975 University Organisation Act, and has increasingly developed into a research university ever since. Contemporaries from the years when the TU Wien was still the TH in Vienna have a place to tell their stories in this volume, alongside articles on interfaculty research facilities and service centres that support research activities and transfer of research results in accordance with the TU Wien's motto, “Technology for people”. One of the main goals of this book is to not only inform readers, but also to amuse them a bit as they peruse the pages of the volume.
Nonlinear Differential Equation Models
The papers in this book originate from lectures which were held at the "Vienna Workshop on Nonlinear Models and Analysis" – May 20–24, 2002. They represent a cross-section of the research field Applied Nonlinear Analysis with emphasis on free boundaries, fully nonlinear partial differential equations, variational methods, quasilinear partial differential equations and nonlinear kinetic models.
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Gallium Nitride Electronics
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
2003 IEEE Conference on Electron Devices and Solid-State Circuits
The proceedings from the 2003 IEEE Conference on Electron Devices and Solid-State Circuits.
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Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling
The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a rela...
