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Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
  • Language: en
  • Pages: 871

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10

The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.

Nitrogen, Oxygen, and Sulfur Ylide Chemistry
  • Language: en
  • Pages: 328

Nitrogen, Oxygen, and Sulfur Ylide Chemistry

Chemists from Europe, North America, Japan, and India not only describe the chemistry of the three reactive intermediates relevant to their use in synthesizing complex organic compounds, they also provide detailed protocols of methods for generating and using them in reactions. About a third of the book is devoted to nitrogen, oxygen, and sulfur ylides. The rest ammonium, oxonium, and sulfonium; azomethine, carbonyl, and thiocarbonyl; and nitrile flavors. Annotation (c)2003 Book News, Inc., Portland, OR (booknews.com).

Physics and Technology of High-k Gate Dielectrics 6
  • Language: en
  • Pages: 550

Physics and Technology of High-k Gate Dielectrics 6

The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Handbook of Growth Factors
  • Language: en
  • Pages: 392

Handbook of Growth Factors

  • Type: Book
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  • Published: 1994-06-02
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  • Publisher: CRC Press

Handbook of Growth Factors, Volume III is devoted to hematopoiesis and its regulation by endogenous factors with growth stimulatory and growth inhibitory properties. The book provides detailed discussions on signaling agents related to the regulation of hematopoiesis, including the interleukins, the colony-stimulating factors, the interferons, the tumor necrosis factors, the erythropoietic growth factors, the platelet-derived growth factor, the leukemia inhibitory factor, and the transferrins. The structure and function of each factor is covered in detail, as well as its receptor and postreceptor mechanism of action and its possible role in neoplastic processes. The book also explores the present state of the knowledge about megakaryocyte growth factors and macrophage-derived growth factors.

Amyloidosis
  • Language: en
  • Pages: 811

Amyloidosis

From a process that from the days of Vir chow and Rokitansky, primarily stimulated the relatively narrow interest of pathologists, amyloidosis has risen full-blown as one of the most important of disease complexes. Its presence dominat:es the lesions of Alzheimer's disease, a disease affecting an estimated 2. 5 million people in the U. S. A. and thereby closely rivaling stroke as the third most common cause of death. If, as it has been de scribed, Alzheimer's disease is the "Disease of the Century," then amy loidosis is the Disease Complex of the Ages. It affects in one or more of its manifestations every organ of the body, and is at least as old as the afflicted Egyptian mummies of the pyra...

Physics and Technology of High-k Materials 9
  • Language: en
  • Pages: 504
SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices
  • Language: en
  • Pages: 1066

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.