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Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. Th...
New advanced materials are being rapidly developed, thanks to the progress of science. These are making our daily life more convenient. The Institute for Materials Research (IMR) at Tohoku University has greatly contributed for to the creation and development of various advanced materials and the progress in the ?eld of material science for almost a century. For example, our early research achievements on the physical metallurgy of iron carbon alloys led to the innovation of technology for making high-quality steels, which has greatly contributed to the advancement of the steel and related industry in Japan and rest of the world. IMR has focused on basic research that can be translated into ...
This book surveys recent theoretical and experimental studies of optical properties of low-dimensional materials. As an extended version of Optical Properties of Low-Dimensional Materials (Volume 1, published in 1995 by World Scientific), Volume 2 covers a wide range of interesting low-dimensional materials including both inorganic and organic systems, such as disordered polymers, deformable molecular crystals, dilute magnetic semiconductors, SiGe/Si short-period superlattices, GaAs quantum wires, semiconductor microcavities, and photonic crystals. There are excellent review articles by promising researchers in each field. All the materials introduced in this book yield new optical phenomena originating from their mesoscopic and low-dimensional electronic characters and electron-lattice couplings, which offer a new research field of materials science as well as condensed-matter and optical physics. Volumes 1 and 2 are interrelated but can be read independently. They are pitched at the level of graduate students and are useful to both students and scientists.
This book surveys recent theoretical and experimental studies of optical properties of low-dimensional materials. As an extended version of Optical Properties of Low-Dimensional Materials (Volume 1, published in 1995 by World Scientific), Volume 2 covers a wide range of interesting low-dimensional materials including both inorganic and organic systems, such as disordered polymers, deformable molecular crystals, dilute magnetic semiconductors, SiGe/Si short-period superlattices, GaAs quantum wires, semiconductor microcavities, and photonic crystals. There are excellent review articles by promising researchers in each field. All the materials introduced in this book yield new optical phenomena originating from their mesoscopic and low-dimensional electronic characters and electron-lattice couplings, which offer a new research field of materials science as well as condensed-matter and optical physics. Volumes 1 and 2 are interrelated but can be read independently. They are pitched at the level of graduate students and are useful to both students and scientists.
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Nanotechnology Provides comprehensive coverage of the dominant technology of the 21st century Written by a truly international list of contributors.
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.